Datasheet > TBL150P06B

TBL150P06B

更新时间： 2024-09-24 17:01:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	718K
描述
78A, 60V, 187W, P Channel, Power MOSFETs

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中文翻译

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数据手册

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TBL150P06B 数据手册

P-Channel Enhancement Mode MOSFET

TBL150P06B

Features



High density cell design for ultralow R_DS(ON)

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

JESD22-A114-B ESD rating of class 1C per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-263

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL150P06B

TO-263

50 pcs / Tube & 800 pcs / Tape & Reel

150P06B

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-60

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

-78

-55

I_D

-13

-9

I_DM

E_AS

P_D

-312

240

°C

187

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +175

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

0.6

0.8

°C /W

MTM1258A: June 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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