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TB0900H-7 PDF预览

TB0900H-7

更新时间: 2024-11-06 14:45:07
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
4页 83K
描述
Silicon Surge Protector, 50A, PLASTIC, SMB, 2 PIN

TB0900H-7 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-C2
针数:2Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.15
配置:SINGLE最大断态直流电压:75 V
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
通态非重复峰值电流:50 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

TB0900H-7 数据手册

 浏览型号TB0900H-7的Datasheet PDF文件第2页浏览型号TB0900H-7的Datasheet PDF文件第3页浏览型号TB0900H-7的Datasheet PDF文件第4页 
TB0640H - TB3500H  
100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR  
SURGE PROTECTIVE DEVICE  
Features  
DEVELOPMENT  
UNDER  
·
·
·
·
·
·
100A Peak Pulse Current @ 10/1000ms  
400A Peak Pulse Current @ 8/20ms  
58 - 320V Stand-Off Voltages  
Oxide-Glass Passivated Junction  
Bi-Directional Protection In a Single Device  
High Off-State impedance and Low On-State  
Voltage  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
A
SMB  
Min  
Dim  
A
Max  
4.57  
3.94  
2.21  
0.31  
5.59  
0.20  
2.62  
1.52  
4.06  
3.30  
1.96  
0.15  
5.21  
0.05  
2.01  
0.76  
B
C
·
B
C
D
E
D
Mechanical Data  
F
G
G
H
·
·
Case: SMB, Molded Plastic  
Terminals: Solder Plated Terminal -  
Solderable per MIL-STD-202, Method 208  
F
H
All Dimensions in mm  
E
·
Polarity: None; Bi-Directional Devices Have No  
Polarity Indicator  
·
·
Weight: 0.093 grams (approx.)  
Marking: Date Code and Marking Code  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Non-Repetitive Peak Impulse Current  
Non-Repetitive Peak On-State Current  
Junction Temperature Range  
Symbol  
Ipp  
Value  
100  
50  
Unit  
A
@10/1000us  
@8.3ms (one-half cycle)  
ITSM  
A
Tj  
-40 to +150  
-55 to +150  
20  
°C  
TSTG  
RqJL  
Storage Temperature Range  
°C  
Thermal Resistance, Junction to Lead  
Thermal Resistance, Junction to Ambient  
°C/W  
°C/W  
%/°C  
RqJA  
100  
DVBR/DTj  
Typical Positive Temperature Coefficient for Breakdown Voltage  
0.1  
Maximum Rated Surge Waveform  
Peak Value (Ipp  
)
100  
50  
0
Waveform  
2/10 us  
Standard  
Ipp (A)  
500  
tr = rise time to peak value  
tp = decay time to half value  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
8/20 us  
400  
Half Value  
10/160 us  
10/700 us  
10/560 us  
10/1000 us  
250  
ITU-T, K20/K21  
FCC Part 68  
200  
160  
GR-1089-CORE  
100  
tp  
tr  
0
TIME  
DS30360 Rev. 1 - 1  
1 of 4  
TB0640H - TB3500H  

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