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TB0900M PDF预览

TB0900M

更新时间: 2024-11-06 08:28:55
品牌 Logo 应用领域
台湾光宝 - LITEON 光电二极管
页数 文件大小 规格书
4页 50K
描述
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

TB0900M 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-C2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.7Is Samacsys:N
最大转折电压:98 V配置:SINGLE
最大断态直流电压:75 V最大维持电流:800 mA
JESD-30 代码:R-PDSO-C2通态非重复峰值电流:40 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):255
认证状态:Not Qualified子类别:Silicon Surge Protectors
表面贴装:YES端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SILICON SURGE PROTECTORBase Number Matches:1

TB0900M 数据手册

 浏览型号TB0900M的Datasheet PDF文件第2页浏览型号TB0900M的Datasheet PDF文件第3页浏览型号TB0900M的Datasheet PDF文件第4页 
LITE-ON  
SEMICONDUCTOR  
TB0640M thru TB3500M  
Bi-Directional  
SURFACE MOUNT  
THYRISTOR SURGE PROTECTIVE DEVICE  
58 to 320  
VDRM  
IPP  
-
-
Volts  
50  
Amperes  
FEATURES  
SMB  
Oxide Glass Passivated Junction  
Bidirectional protection in a single device  
Surge capabilities up to 50A @10/1000us or 250A  
@8/20us  
SMB  
MIN.  
4.06  
3.30  
1.96  
0.15  
5.21  
0.05  
2.01  
0.76  
DIM.  
A
MAX.  
4.57  
3.94  
2.21  
0.31  
5.59  
0.20  
2.62  
1.52  
High off state Impedance and low on state voltage  
A
Plastic material has UL flammability classification  
94V-0  
B
B
C
C
D
E
F
MECHANICAL DATA  
Case : Molded plastic  
G
G
D
H
F
E
H
Polarity : Denotes none cathode band  
Weight : 0.093 grams  
All Dimensions in millimeter  
MAXIMUM RATINGS  
CHARACTERISTICS  
SYMBOL  
PP  
TSM  
VALUE  
UNIT  
A
A
I
Non-repetitive peak impulse current @ 10/1000us  
Non-repetitive peak On-state current @ 8.3ms (one half cycle)  
Junction temperature range  
50  
I
25  
T
J
-40 to +150  
-55 to +150  
T
STG  
storage temperature range  
THERMAL RESISTANCE  
CHARACTERISTICS  
SYMBOL  
VALUE  
UNIT  
Rth(J-L)  
Rth(J-A)  
Junction to leads  
20  
100  
0.1  
/W  
/W  
Junction to ambient on print circuit (on recommended pad layout)  
Typical positive temperature coefficient for brekdown voltage  
V / T  
BR J  
%/  
MAXIMUM RATED SURGE WAVEFORM  
WAVEFORM  
2/10 us  
STANDARD  
I
PP (A)  
300  
100  
Peak value (Ipp)  
GR-1089-CORE  
tr= rise time to peak value  
tp= Decay time to half value  
8/20 us  
10/160 us  
10/700 us  
IEC 61000-4-5  
FCC Part 68  
ITU-T K20/21  
250  
150  
100  
Half value  
50  
0
10/560 us  
FCC Part 68  
75  
50  
tr  
tp  
TIME  
REV. 0, 09-Oct-2001, KSWB06  
10/1000 us  
GR-1089-CORE  

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