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TA32912Q PDF预览

TA32912Q

更新时间: 2024-02-20 09:28:24
品牌 Logo 应用领域
DYNEX 栅极
页数 文件大小 规格书
10页 105K
描述
Asymmetric Thyristor

TA32912Q 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer包装说明:DISK BUTTON, O-CXDB-X4
针数:4Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.2
配置:SINGLE最大直流栅极触发电流:250 mA
JESD-30 代码:O-CXDB-X4元件数量:1
端子数量:4封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:370 A断态重复峰值电压:1200 V
重复峰值反向电压:10 V表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:ASSYMETRIC SCR
Base Number Matches:1

TA32912Q 数据手册

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TA329..Q  
Asymmetric Thyristor  
Advance Information  
Replaces March 1998 version, DS4680-2.1  
DS4680-3.0 January 2000  
APPLICATIONS  
KEY PARAMETERS  
VDRM  
IT(RMS)  
ITSM  
dVdt  
dI/dt  
tq  
1400V  
370A  
2000A  
High Frequency Applications  
High Power Choppers And Inverters  
Welding  
1000V/µs  
1000A/µs  
7.0µs  
Ultrasonic Generators  
Induction Heating  
400Hz UPS  
PWM Inverters  
FEATURES  
Low Loss Asymmetrical Diffusion Structure  
High Interdigitated Amplifying Gate  
Gate Assisted Turn-off With Exclusive Bypass Diode  
Fully Characterised For Operation up to 40kHz  
Directly Compatible With 220-480 A.c. Mains  
VOLTAGE RATINGS  
Type Number  
Repetitive Peak  
Repetitive Peak  
Off-state Voltage  
Reverse Voltage  
VDRM  
V
VRRM  
V
TA329 14 Q  
TA329 12 Q  
TA329 10 Q  
10  
10  
10  
1400  
1200  
1000  
Outline type code: MU86.  
Lower voltage grades available.  
See Package Details for further information.  
CURRENT AND SURGE RATINGS  
Symbol  
Parameter  
Conditions  
Max.  
Units  
Double Side Cooled  
Half sine wave, duty cycle 50%, Tcase = 80oC,  
Tj = 125˚C.  
IT(RMS)  
370  
A
RMS value  
Surge (non-repetitive) on-state current  
I2t for fusing  
Tj = 125oC, tp = 1ms, VR = 0  
2000  
A
ITSM  
I2t  
tp 10ms  
20 x 103  
A2s  
1/10  

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