Datasheet > TA329Q

TA329Q

更新时间： 2024-01-19 11:19:14

品牌	Logo	应用领域
DYNEX		/
页数	文件大小	规格书
10页	105K
描述
Asymmetric Thyristor

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中文翻译

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数据手册

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TA329Q 数据手册

TA329..Q

Asymmetric Thyristor

Advance Information

Replaces March 1998 version, DS4680-2.1

DS4680-3.0 January 2000

APPLICATIONS

KEY PARAMETERS

V_DRM

I_T(RMS)

I_TSM

dVdt

dI/dt

t_q

1400V

370A

2000A

■ High Frequency Applications

■ High Power Choppers And Inverters

■ Welding

1000V/µs

1000A/µs

7.0µs

■ Ultrasonic Generators

■ Induction Heating

■ 400Hz UPS

■ PWM Inverters

FEATURES

■ Low Loss Asymmetrical Diffusion Structure

■ High Interdigitated Amplifying Gate

■ Gate Assisted Turn-off With Exclusive Bypass Diode

■ Fully Characterised For Operation up to 40kHz

■ Directly Compatible With 220-480 A.c. Mains

VOLTAGE RATINGS

Type Number

Repetitive Peak

Off-state Voltage

Reverse Voltage

V_DRM

V_RRM

TA329 14 Q

TA329 12 Q

TA329 10 Q

1400

1200

1000

Outline type code: MU86.

Lower voltage grades available.

See Package Details for further information.

CURRENT AND SURGE RATINGS

Symbol

Parameter

Conditions

Max.

Units

Double Side Cooled

Half sine wave, duty cycle 50%, T_case= 80^oC,

T_j= 125˚C.

I_T(RMS)

370

RMS value

Surge (non-repetitive) on-state current

I²t for fusing

T_j= 125^oC, t_p= 1ms, V_R= 0

2000

I_TSM

I²t

t_p≥ 10ms

20 x 10³

A²s

1/10

12 3 4 5 6 7...10

中文翻译

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