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T930S20TOB PDF预览

T930S20TOB

更新时间: 2024-11-05 15:53:43
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
6页 215K
描述
Silicon Controlled Rectifier, 2130A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element

T930S20TOB 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-XXDB-X3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
配置:SINGLE最大直流栅极触发电流:250 mA
JESD-30 代码:O-XXDB-X3元件数量:1
端子数量:3封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:2130 A
断态重复峰值电压:2000 V重复峰值反向电压:2000 V
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED触发设备类型:SCR
Base Number Matches:1

T930S20TOB 数据手册

 浏览型号T930S20TOB的Datasheet PDF文件第2页浏览型号T930S20TOB的Datasheet PDF文件第3页浏览型号T930S20TOB的Datasheet PDF文件第4页浏览型号T930S20TOB的Datasheet PDF文件第5页浏览型号T930S20TOB的Datasheet PDF文件第6页 
Datenblatt / Data sheet  
N
Netz-Thyristor  
Phase Control Thyristor  
T930S  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
1600 V  
1800 V  
2000 V  
1600 V  
1800 V  
2000 V  
Tvj = -40°C... Tvj max  
VDRM,VRRM  
PeriodischeVorwärts- und Rückwärts-Spitzensperrspannung  
repetitive peak forward off-state and reverse voltages  
Vorwärts-Stossspitzensperrspannung  
non-repetitive peak forward off-state voltage  
Tvj = -40°C... Tvj max  
VDSM  
1700 V  
1900 V  
2100 V  
Rückwärts-Stossspitzensperrspannung  
non-repetitive peak reverse voltage  
Tvj = +25°C... Tvj max  
VRSM  
2000 A  
Durchlassstrom-Grenzeffektivwert  
maximum RMS on-state current  
Dauergrenzstrom  
average on-state current  
ITRMSM  
ITAVM  
930 A  
TC = 85  
1360 A  
2130 A  
Dauergrenzstrom  
TC = 55 °C, θ = 180°sin, tP = 10 ms ITAVM  
average on-state current  
Durchlaßstrom-Effektivwert  
RMS on-state current  
ITRMS  
20500 A  
18000 A  
Tvj = 25 °C °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
Stossstrom-Grenzwert  
surge current  
ITSM  
2100 10³ A²s  
1620 10³ A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
DIN IEC 60747-6  
250 A/µs  
Kritische Stromsteilheit  
(diT/dt)cr  
vD 67%VDRM, f = 50 Hz,  
critical rate of rise of on-state current  
i
GM = 1,2 A, diG/dt = 1,2 A/µs  
Kritische Spannungssteilheit  
critical rate of rise of off-state voltage  
Tvj = Tvj max, vD = 0,67 VDRM  
(dvD/dt)cr  
5.Kennbuchstabe / 5th letter  
V/µs  
V/µs  
B:  
50  
C:  
500  
Charakteristische Werte / Characteristic values  
Durchlassspannung  
max.  
2,7 V  
1,35 V  
0,33 mΩ  
Tvj = Tvj max, iT = 3500A  
Tvj = Tvj max  
vT  
on-state voltage  
Schleusenspannung  
threshold voltage  
Ersatzwiderstand  
slope resistance  
V(TO)  
rT  
Tvj = Tvj max  
Durchlasskennlinie  
250A iT 4500 A  
Tvj = Tvj max  
A=  
B=  
C=  
D=  
1,613E+00  
on-state characteristic  
1,744E-04  
-7,502E-02  
1,780E-02  
vT = A + B iT + C ln(iT + 1) + D  
iT  
Zündstrom  
Tvj = 25 °C, vD = 12V  
Tvj = 25 °C, vD = 12V  
IGT  
max.  
250 mA  
gate trigger current  
Zündspannung  
gate trigger voltage  
Nicht zündender Steuerstrom  
gate non-trigger current  
VGT  
IGD  
max.  
2,2 V  
Tvj = Tvj max, vD = 12V  
Tvj = Tvj max, vD = 0,5 VDRM  
max.  
max.  
10 mA  
5 mA  
Nicht zündende Steuerspannung  
gate non-trigger voltage  
Tvj = Tvj max, vD = 0,5 VDRM  
VGD  
max.  
0,25 V  
Haltestrom  
Tvj = 25°C, vD = 12V  
IH  
IL  
max.  
300 mA  
holding current  
Einraststrom  
latching current  
Tvj = 25°C, vD = 12V, RGK 10 Ω  
max. 1500 mA  
i
GM = 1,2 A, diG/dt = 1,2 A/µs,  
tg = 20 µs  
1) Werte nach DIN IED 747-6 (ohne vorausgehende Kommutierung) / values to DIN IEC 747-6 (without prior commutation)  
H.Sandmann  
date of publication: 2008-09-15  
revision: 3.0  
prepared by:  
approved by: M.Leifeld  
Seite/page  
1/6  
IFBIP D AEC/ 2008-09-15, H.Sandmann  
A 46/08  

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