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T830N18TOF

更新时间: 2024-11-26 20:46:43
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
10页 244K
描述
Silicon Controlled Rectifier, 1880A I(T)RMS, 826000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element

T830N18TOF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:DISK BUTTON, O-XXDB-X3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:4.63标称电路换相断开时间:250 µs
配置:SINGLE关态电压最小值的临界上升速率:1000 V/us
最大直流栅极触发电流:250 mA最大直流栅极触发电压:1.5 V
最大维持电流:300 mAJESD-30 代码:O-XXDB-X3
最大漏电流:80 mA通态非重复峰值电流:14500 A
元件数量:1端子数量:3
最大通态电流:826000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1880 A断态重复峰值电压:1800 V
重复峰值反向电压:1800 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

T830N18TOF 数据手册

 浏览型号T830N18TOF的Datasheet PDF文件第2页浏览型号T830N18TOF的Datasheet PDF文件第3页浏览型号T830N18TOF的Datasheet PDF文件第4页浏览型号T830N18TOF的Datasheet PDF文件第5页浏览型号T830N18TOF的Datasheet PDF文件第6页浏览型号T830N18TOF的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Thyristor  
Phase Control Thyristor  
T830N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
1200  
1400  
1600 V  
1800 V  
Tvj = -40°C... Tvj max  
Tvj = -40°C... Tvj ma  
VDRM,VRRM  
PeriodischeVorwärts- und Rückwärts-Spitzensperrspannung  
repetitive peak forward off-state and reverse voltages  
1200  
1400  
1600 V  
1800 V  
Vorwärts-Stossspitzensperrspannung  
VDSM  
x
non-repetitive peak forward off-state voltage  
1300  
1500  
1700 V  
1900 V  
Rückwärts-Stossspitzensperrspannung  
non-repetitive peak reverse voltage  
Tvj = +25°C... Tvj max  
VRSM  
1500 A  
Durchlassstrom-Grenzeffektivwert  
maximum RMS on-state current  
Dauergrenzstrom  
average on-state current  
ITRMSM  
ITAVM  
826 A  
TC = 85 °C  
1200 A  
1880 A  
Dauergrenzstrom  
TC = 55 °C, θ = 180°sin, tP = 10 ms ITAVM  
average on-state current  
Durchlaßstrom-Effektivwert  
RMS on-state current  
ITRMS  
14500 A  
12500 A  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
Stossstrom-Grenzwert  
surge current  
ITSM  
1051 10³ A²s  
781 10³ A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
DIN IEC 60747-6  
120 A/µs  
Kritische Stromsteilheit  
(diT/dt)cr  
(dvD/dt)cr  
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs  
critical rate of rise of on-state current  
1000 V/µs  
Kritische Spannungssteilheit  
critical rate of rise of off-state voltage  
Tvj = Tvj max, vD = 0,67 VDRM  
5.Kennbuchstabe / 5th letter F  
Charakteristische Werte / Characteristic values  
Durchlassspannung  
on-state voltage  
max.  
max.  
1,94 V  
1,20 V  
Tvj = Tvj max, iT = 3000 A  
Tvj = Tvj max, iT = 750 A  
vT  
0,85 V  
Schleusenspannung  
threshold voltage  
Ersatzwiderstand  
slope resistance  
Durchlasskennlinie  
on-state characteristic  
Tvj = Tvj max  
Tvj = Tvj max  
Tvj = Tvj max  
V(TO)  
rT  
0,35 mΩ  
200 A iT 4100 A  
A=  
1,173E+00  
B=  
C=  
D=  
1,489E-04  
-9,456E-02  
1,966E-02  
vT = A + B iT + C ln(iT + 1) + D  
iT  
Zündstrom  
Tvj = 25 °C, vD = 12V  
Tvj = 25 °C, vD = 12V  
IGT  
max.  
250 mA  
gate trigger current  
Zündspannung  
gate trigger voltage  
Nicht zündender Steuerstrom  
gate non-trigger current  
VGT  
IGD  
max.  
1,5 V  
Tvj = Tvj max, vD = 12V  
Tvj = Tvj max, vD = 0,5 VDRM  
max.  
max.  
10 mA  
5 mA  
Nicht zündende Steuerspannung  
gate non-trigger voltage  
Haltestrom  
holding current  
Tvj = Tvj max, vD = 0,5 VDRM  
VGD  
IH  
max.  
0,2 V  
Tvj = 25°C, vD = 12V  
max.  
300 mA  
Einraststrom  
latching current  
Tvj = 25°C, vD = 12V, RGK 10 Ω  
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs  
IL  
max. 1500 mA  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse current  
Tvj = Tvj max  
iD, iR  
tgd  
max.  
max.  
80 mA  
4 µs  
vD = VDRM, vR = VRRM  
Zündverzug  
gate controlled delay time  
DIN IEC 60747-6  
Tvj = 25 °C, iGM = 1 A, diG/dt = 1 A/µs  
H.Sandmann  
date of publication: 2010-01-13  
prepared by:  
revision:  
3.1  
approved by: M.Leifeld  
IFBIP D AEC / 2010-01-13, H.Sandmann  
A 04/10  
Seite/page  
1/10  

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