Datasheet > T830W

T830W

更新时间： 2024-11-27 22:20:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		三端双向交流开关
页数	文件大小	规格书
5页	65K
描述
SNUBBERLESS TRIAC

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中文翻译

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数据手册

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T830W 数据手册

T820W

T830W

SNUBBERLESS TRIAC

FEATURES

A₂

A₁

I_TRMS= 8 A

V_DRM= V_RRM= 400V to 700V

EXCELLENT SWITCHING PERFORMANCES

INSULATING VOLTAGE = 1500V_(RMS)

U.L. RECOGNIZED : E81734

DESCRIPTION

The T820/830W triacs use high performanceglass

passivated chip technology, housed in a fully

molded plastic ISOWATT220AB package.

The SNUBBERLESS^TMconcept offers suppres-

sion of R-C network, and is suitable for applica-

tions such as phase control and static switch on

inductive and resistive loads.

A₁

A₂

ISOWATT220AB

(Plastic)

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

I_T(RMS)

RMS on-state current

(360° conductionangle)

Tc= 95°C

I_TSM

Non repetitivesurge peak on-state current

(T_jinitial = 25°C )

tp = 16.7 ms

(1 cycle, 60 Hz)

tp = 10 ms

100

(1/2 cycle, 50 Hz)

I²t

I²t Value (half-cycle, 50 Hz)

tp = 10 ms

A²s

dI/dt

Critical rate of rise of on-state current

Gate supply : I_G= 500 mA

Repetitive

F = 50 Hz

A/µs

dI_G/dt = 1 A/µs.

Non Repetitive

100

T_stg

T_j

Storage temperature range

- 40 to + 150

- 40 to + 125

°C

Operating junction temperature range

Maximum lead temperature for soldering during 10s at 4.5 mm

from case

260

T820 / 830-xxxW

Symbol

Parameter

Unit

400

600

700

Repetitive peak off-state voltage

T_j= 125°C

V_DRM

V_RRM

400

600

700

April 1995

1/5

12 3 4 5

中文翻译

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