Datasheet > T2G6003028-FL-EVB1

T2G6003028-FL-EVB1

更新时间： 2024-11-10 01:07:59

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
13页	1017K
描述
30W, 28V DC 6 GHz, GaN RF Power Transistor

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T2G6003028-FL-EVB1 数据手册

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T2G6003028-FL

30W, 28V DC – 6 GHz, GaN RF Power Transistor

Applications

• Military radar

• Civilian radar

• Professional and military radio communications

• Test instrumentation

• Wideband or narrowband amplifiers

• Jammers

Product Features

Functional Block Diagram

• Frequency: DC to 6 GHz

• Output Power (P_3dB): 25 W at 5.6 GHz

• Linear Gain: >14 dB at 5.6 GHz

• Operating Voltage: 28 V

• Low thermal resistance package

General Description

Pin Configuration

The TriQuint T2G6003028-FL is a 30W (P_3dB) discrete

GaN on SiC HEMT which operates from DC to 6 GHz.

The device is constructed with TriQuint’s proven

TQGaN25 process, which features advanced field plate

techniques to optimize power and efficiency at high drain

bias operating conditions. This optimization can

potentially lower system costs in terms of fewer amplifier

line-ups and lower thermal management costs.

Pin No.

Label

V_D/ RF OUT

V_G/ RF IN

Source

Flange

Lead-free and ROHS compliant

Ordering Information

Part ECCN

Evaluation boards are available upon request.

Description

Packaged part

Flanged

T2G6003028-FL EAR99

T2G6003028-FL-

EAR99

5.4 – 5.9 GHz

Evaluation Board

EVB1

T2G6003028-FL-

EAR99

1.3 – 1.9 GHz

Evaluation Board

EVB2

Datasheet: Rev A 12-03-13

Disclaimer: Subject to change without notice

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