型号 | 品牌 | 获取价格 | 描述 | 数据表 |
T2G6003028-FS_15 | TRIQUINT |
获取价格 |
30W, 28V DC 6 GHz, GaN RF Power Transistor | |
T2G6003028-FSEVB1 | QORVO |
获取价格 |
30W, 28V DC â 6 GHz, GaN RF Power Transisto | |
T2G6003028-FS-EVB1 | TRIQUINT |
获取价格 |
30W, 28V DC 6 GHz, GaN RF Power Transistor | |
T2G6003028-FSEVB2 | QORVO |
获取价格 |
30W, 28V DC â 6 GHz, GaN RF Power Transisto | |
T2G6003028-FS-EVB2 | TRIQUINT |
获取价格 |
30W, 28V DC 6 GHz, GaN RF Power Transistor | |
T2H | MURATA |
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Explanation of Symbols in This Catalog Lx W dimension: products of 0.6 x 0.3 mm or less | |
T2K096CG100FP-F | TAIYO YUDEN |
获取价格 |
ISOLATED C NETWORK, 25V, C0G, 0.00001uF, SURFACE MOUNT, CHIP-4, CHIP, ROHS COMPLIANT | |
T2K096CG120KP-F | TAIYO YUDEN |
获取价格 |
ISOLATED C NETWORK, 25V, C0G, 0.000012uF, SURFACE MOUNT, CHIP-4, CHIP, ROHS COMPLIANT | |
T2K096CG470KP-F | TAIYO YUDEN |
获取价格 |
ISOLATED C NETWORK, 25V, C0G, 0.000047uF, SURFACE MOUNT, CHIP-4, CHIP, ROHS COMPLIANT | |
T2K096CG560KP-T | TAIYO YUDEN |
获取价格 |
ISOLATED C NETWORK, 25V, C0G, 0.000056uF, SURFACE MOUNT, CHIP-4, CHIP, ROHS COMPLIANT |