Datasheet > T1290BF65A

T1290BF65A

更新时间： 2024-11-11 14:56:59

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力特 - LITTELFUSE		双极性晶体管
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T1290BF65A 数据手册

Date:- 16 Feb, 2015

Data Sheet Issue:- A1

Advance data

Insulated Gate Bi-Polar Transistor

Type T1290BF65A

Absolute Maximum Ratings

MAXIMUM

VOLTAGE RATINGS

LIMITS

UNITS

V_CES

V_{DC link}

V_GES

Collector – emitter voltage

6500

6000

3600

±20

Collector – emitter voltage (T_j25°C)

Collector – emitter voltage (T_j-40°C)

Permanent DC voltage for 100 FIT failure rate.

Peak gate – emitter voltage

MAXIMUM

LIMITS

RATINGS

UNITS

I_C

DC collector current, IGBT

1290

2580

I_CRM

I_F(DC)

I_FRM

I_FSM

I_FSM2

P_MAX

(di/dt)_cr

T_j

Repetitive peak collector current, t_p=1ms, IGBT

Continuous DC forward current, Diode

Repetitive peak forward current, t_p=1ms, Diode

Peak non-repetitive surge t_p=10ms, V_RM=60%V_RRM, Diode (Note 4)

Peak non-repetitive surge t_p=10ms, V_RM≤10V, Diode (Note 4)

Maximum power dissipation, IGBT (Note 2)

Critical diode di/dt (note 3)

1290

2580

10.9

A/µs

°C

15.2

4500

Operating temperature range.

-40 to +125

T_stg

Storage temperature range.

Notes: -

1) Unless otherwise indicated T_j= 125ºC.

2) T_sink= 25°C, double side cooled.

3) Maximum commutation loop inductance 230nH.

4) Half-sinewave, 125°C T_jinitial.

Provisional Data Sheet T1290BF65A Issue A1

Page 1 of 5

February, 2015

12 3 4 5 6

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