Datasheet > T12-G

T12-G

更新时间： 2024-01-29 01:40:10

品牌	Logo	应用领域
SUNTAC		可控硅
页数	文件大小	规格书
4页	74K
描述
12A Triacs logic level

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

T12-G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	ROHS COMPLIANT
Reach Compliance Code：	unknown	风险等级：	5.43
其他特性：	TOP ENTRY	连接器类型：	BOARD CONNECTOR
联系完成配合：	TIN OVER COPPER	联系完成终止：	TIN OVER COPPER
触点性别：	MALE	触点材料：	BRASS
DIN 符合性：	NO	滤波功能：	NO
IEC 符合性：	NO	JESD-609代码：	e3
MIL 符合性：	NO	混合触点：	NO
安装方式：	STRAIGHT	安装类型：	BOARD
装载的行数：	1	选件：	GENERAL PURPOSE
端子节距：	2.54 mm	端接类型：	SOLDER
触点总数：	12	UL 易燃性代码：	94V-0
Base Number Matches：	1

T12-G 数据手册

BTA/BTB12 series

!!!!!!!!!_!!

!!!!!!12A Triacs logic level

MAIN FEATURES:

Symbol

Value

Unit

T(RMS)

600 and 800

DRM RRM

5 to 50

GT (Q )

DESCRIPTION

Available either in through-hole or surface-mount

packages, the BTA/BTB12 and T12 triac series is

suitable for general purpose AC switching. They

can be used as an ON/OFF function in

applications such as static relays, heating

regulation, induction motor starting circuits... or for

phase control operation in light dimmers, motor

speed controllers,...

D PAK

(T12-G)

The snubberless versions (BTA/BTB...W and T12

series) are specially recommended for use on

inductive loads, thanks to their high commutation

performances. Logic level versions are designed

to interface directly with low power drivers such as

microcontrollers. By using an internal ceramic

pad, the BTA series provides voltage insulated tab

(rated at 2500V RMS) complying with UL

standards (File ref.: E81734)

TO-220AB Insulated

(BTA12)

TO-220AB

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

RMS on-state current (full sine wave)

Tc = 105°C

D PAK/TO-220AB

TO-220AB Ins.

F = 50 Hz

T(RMS)

Tc = 90°C

t = 20 ms

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25°C)

120

126

TSM

F = 60 Hz

t = 16.7 ms

tp = 10 ms

A s

I t

I t Value for fusing

Critical rate of rise of on-state current

dI/dt

F = 120 Hz

Tj = 125°C

Tj = 25°C

A/µs

= 2 x I , tr ≤ 100 ns

Non repetitive surge peak off-state

voltage

DRM RRM

tp = 10 ms

tp = 20 µs

DSM RSM

+ 100

Peak gate current

Tj = 125°C

Average gate power dissipation

G(AV)

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

stg

°C

1/4

12 3 4

下载PDF

与T12-G相关器件

型号	品牌	描述	获取价格	数据表
T12M35T600B(LS)	DIODES	Triacs Silicon Bidirectional Thyristors	获取价格
T12M50F600B(LS)	DIODES	Triacs Silicon Bidirectional Thyristors	获取价格
T12M50T800HD(LS)	DIODES	Triacs Silicon Bidirectional Thyristors	获取价格
T12M5T600B(LS)	DIODES	Sensitive Gate Triacs Silicon Bidirectional Thyristors	获取价格
T12-MSM	SCHURTER	Circuit Breaker for Equipment thermal with Metal Actuator	获取价格
T12-MSM_18	SCHURTER	Circuit Breaker for Equipment thermal with Metal Actuator	获取价格