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T0650TA52A PDF预览

T0650TA52A

更新时间: 2024-02-18 13:42:43
品牌 Logo 应用领域
IXYS 晶体管
页数 文件大小 规格书
8页 417K
描述
Insulated Gate Bipolar Transistor, 780A I(C), 5200V V(BR)CES, N-Channel, TA, 4 PIN

T0650TA52A 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X4
针数:4Reach Compliance Code:unknown
风险等级:5.84最大集电极电流 (IC):780 A
集电极-发射极最大电压:5200 V配置:SINGLE WITH BUILT-IN DIODE
JESD-30 代码:O-CXDB-X4元件数量:1
端子数量:4封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED晶体管元件材料:SILICON
标称断开时间 (toff):5000 ns标称接通时间 (ton):4100 ns
Base Number Matches:1

T0650TA52A 数据手册

 浏览型号T0650TA52A的Datasheet PDF文件第2页浏览型号T0650TA52A的Datasheet PDF文件第3页浏览型号T0650TA52A的Datasheet PDF文件第4页浏览型号T0650TA52A的Datasheet PDF文件第5页浏览型号T0650TA52A的Datasheet PDF文件第6页浏览型号T0650TA52A的Datasheet PDF文件第7页 
Date:- 18 Jun, 2003  
Data Sheet Issue:- 2  
Provisional Data  
Insulated Gate Bi-Polar Transistor  
Type T0650TA52A  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VCES  
Collector – emitter voltage  
5200  
2800  
±20  
V
V
V
VDC link  
VGES  
Permanent DC voltage for 100 FIT failure rate.  
Peak gate – emitter voltage  
MAXIMUM  
LIMITS  
RATINGS  
UNITS  
IC(DC)  
ICRM  
IF(DC)  
IFRM  
Continuous DC collector current, IGBT (Note 2).  
Repetitive peak collector current, tp=1ms, IGBT.  
Continuous DC forward current, Diode (note 2).  
Repetitive peak forward current, tp=1ms, Diode.  
Maximum power dissipation, IGBT (note 3).  
Critical diode di/dt (note 4)  
780  
A
kA  
A
1.3  
518  
1300  
A
PMAX  
(di/dt)cr  
Tj  
6.2  
kW  
A/µs  
°C  
°C  
1200  
Operating temperature range.  
-40 to +125  
-40 to +125  
Tstg  
Storage temperature range.  
Notes: -  
1) Unless otherwise indicated Tj = 125ºC.  
2) Tsink = 55°C, double side cooled.  
3) Tsink = 25°C, double side cooled.  
4) Maximum commutation loop inductance 1µH.  
Provisional Data Sheet T0650TA52A Issue 2  
Page 1 of 8  
June, 2003  

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