Datasheet > T0710TC33A

T0710TC33A

更新时间： 2024-11-06 14:56:59

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管
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T0710TC33A 数据手册

Insulated Gate Bi-polar Transistor Type T0710TC33A

Date:- 12 May, 2022

Data Sheet Issue:- A1

Advance data

Insulated Gate Bi-Polar Transistor

Type T0710TC33A

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_CES

Collector – emitter voltage

3300

1800

±20

V_{DC link}

V_GES

Permanent DC voltage for 100 FIT failure rate.

Peak gate – emitter voltage

MAXIMUM

LIMITS

RATINGS

UNITS

I_C(DC)

I_CRM

I_F(DC)

I_FRM

DC collector current, IGBT

710

1420

710

Repetitive peak collector current, t_p=1ms, IGBT

Continuous DC forward current, Diode

Repetitive peak forward current, t_p=1ms, Diode

Peak non-repetitive surge t_p=10ms, V_RM=60%V_RRM, Diode (Note 4)

Peak non-repetitive surge t_p=10ms, V_RM≤10V, Diode (Note 4)

Maximum power dissipation, IGBT (Note 2)

1420

3736

4110

4.59

I_FSM

I_FSM2

P_MAX

P_D

Maximum power dissipation, Diode (Note 2)

Critical diode di/dt (note 3)

2.31

(di/dt)_cr

1500

A/µs

T_j

Operating temperature range.

Storage temperature range.

-40 to +125

°C

T_stg

Notes: -

1) Unless otherwise indicated T_j= 125ºC.

2) T_sink= 25°C, double side cooled.

3) Maximum commutation loop inductance 600nH.

4) Half-sinewave, 125°C T_jinitial.

Rating Report T0710TC33A Issue A1

Page 1 of 9

May, 2022

12 3 4 5 6 7...9

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