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T0800TB45E PDF预览

T0800TB45E

更新时间: 2024-11-06 14:56:11
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力特 - LITTELFUSE 双极性晶体管
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描述
作为压装IGBT技术的开创者,我们能够提供多种一流的器件,额定电压分别为1.7kV(900V直流链)、2.5kV(1.25kV直流链)、3.3kV(1.8kV直流链)、4.5kV(2.8kV直流链

T0800TB45E 数据手册

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Date:- 14 July, 2011  
Data Sheet Issue:- P1  
WESTCODE  
An IXYS Company  
Prospective Data  
Insulated Gate Bi-Polar Transistor  
Type T0800TB45E  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VCES  
Collector – emitter voltage  
4500  
2800  
±20  
V
V
V
VDC link  
VGES  
Permanent DC voltage for 100 FIT failure rate.  
Peak gate – emitter voltage  
MAXIMUM  
LIMITS  
RATINGS  
UNITS  
IC(DC)  
ICRM  
IECO  
PMAX  
(di/dt)cr  
Tj  
DC collector current, IGBT  
800  
A
A
Repetitive peak collector current, tp=1ms, IGBT  
Maximum reverse emitter current, tp=100µs, (note 2 & 3)  
Maximum power dissipation, IGBT (Note 2)  
Critical diode di/dt (note 3)  
1600  
800  
A
6.4  
KW  
A/µs  
°C  
°C  
1500  
Operating temperature range.  
-40 to +125  
-40 to +125  
Tstg  
Storage temperature range.  
Notes: -  
1) Unless otherwise indicated Tj = 125ºC.  
2) Tsink = 25°C, double side cooled.  
3) The use of an anti-parallel diode is recommended.  
Tentative Data Sheet T0800TB45E Issue P1  
Page 1 of 6  
July, 2011  

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