Datasheet > SZMMBZH33VAWT1G

SZMMBZH33VAWT1G

更新时间： 2024-11-24 20:02:47

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
5页	109K
描述
Rectifier Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SZMMBZH33VAWT1G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
二极管类型：	RECTIFIER DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SZMMBZH33VAWT1G 数据手册

MMBZHxxVAWT1G Series,

SZMMBZHxxVAWT1G Series

Diodes, Dual 40 Watt Peak

Power, High Temperature

SC−70 Dual Common Anode Zeners

www.onsemi.com

These dual monolithic silicon Zener diodes are designed for

applications requiring transient overvoltage protection capability. They

are intended for use in voltage and ESD sensitive equipment such as

computers, printers, business machines, communication systems,

medical equipment and other applications. Their dual junction common

anode design protects two separate lines using only one package. These

devices are high temperature rated and ideal for use in high reliability

applications where board space is at a premium.

SC−70

CASE 419

STYLE 4

Features

CATHODE 1

CATHODE 2

3 ANODE

• SC−70 Package Allows Either Two Separate Unidirectional

Configurations or a Single Bidirectional Configuration

• Standard Zener Breakdown Voltage Range: 15 − 33 V

• Peak Power − 40 W @ 1.0 ms (Unidirectional),

MARKING DIAGRAM

per Figure 5 Waveform

• ESD Rating:

− Class 3B (> 16 kV) per the Human Body Model

− Class C (> 400 V) per the Machine Model

XX MG

• Low Leakage < 5.0 mA

• Flammability Rating UL 94 V−0

XX = Specific Device Code

• 175°C T

− Rated for High Temperature, Mission Critical

J(MAX)

Applications

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

• These are Pb−Free Devices*

ORDERING INFORMATION

Mechanical Characteristics:

†

Device

Package

Shipping

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

Package designed for optimal automated board assembly

Small package size for high density applications

Available in 8 mm Tape and Reel

MMBZHxxVAWT1G

SC−70

(Pb−Free)

3,000 /

Tape & Reel

SZMMBZHxxVAWT1G

SC−70

(Pb−Free)

3,000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Use the Device Number to order the 7 inch/3,000 unit reel.

DEVICE MARKING INFORMATION

See specific marking information in the device marking

column of the table on page 2 of this data sheet.

Publication Order Number:

December, 2018 − Rev. 0

MMBZH27VAW/D

12 3 4 5

中文翻译

下载PDF

与SZMMBZH33VAWT1G相关器件

型号	品牌	获取价格	描述	数据表
SZMMQA12VT1G	ONSEMI	获取价格	ESD 保护器，共阳极，SC-59
SZMMQA13VT1	ONSEMI	获取价格	DIODE TVS DIODE, Transient Suppressor
SZMMQA13VT1G	ONSEMI	获取价格	TVS DIODE
SZMMQA15VT1	ONSEMI	获取价格	DIODE TVS DIODE, Transient Suppressor
SZMMQA15VT1G	ONSEMI	获取价格	ESD Protector, Common Anode, SC-59
SZMMQA18VT1	ONSEMI	获取价格	DIODE TVS DIODE, Transient Suppressor
SZMMQA18VT1G	ONSEMI	获取价格	浪涌保护器，共阳极，SC-59
SZMMQA20VT1	ONSEMI	获取价格	DIODE TVS DIODE, Transient Suppressor
SZMMQA20VT1G	ONSEMI	获取价格	Surge protector, Common Anode, SC-59
SZMMQA20VT3	ONSEMI	获取价格	DIODE TVS DIODE, Transient Suppressor

与SZMMBZH33VAWT1G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

SZMMBZH33VAWT1G

SZMMBZH33VAWT1G 技术参数

SZMMBZH33VAWT1G 数据手册

与SZMMBZH33VAWT1G相关器件

与SZMMBZH33VAWT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SZMMBZH33VAWT1G

SZMMBZH33VAWT1G 技术参数

SZMMBZH33VAWT1G 数据手册

与SZMMBZH33VAWT1G相关器件

与SZMMBZH33VAWT1G相关文章

您还可以找

您在本页遇到什么问题？