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SZBZX84C75ET1G

更新时间： 2024-11-09 11:01:39
品牌 Logo 应用领域
安森美 - ONSEMI 二极管齐纳二极管
页数 文件大小 规格书
6页 78K
描述
Energy Rated Zeners in SOT-23 225 W

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SZBZX84C75ET1G 数据手册

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BZX84C2V4ET1 Series  
Zener Voltage Regulators  
225 mW SOT−23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT−23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
http://onsemi.com  
Specification Features  
3
1
Cathode  
Anode  
• 225 mW Rating on FR−4 or FR−5 Board  
• Zener Breakdown Voltage Range − 2.4 V to 75 V  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• ESD Rating of Class 3 (>16 kV) per Human Body Model  
• Peak Power − 225 W (8 X 20 ms)  
3
SOT−23  
CASE 318  
STYLE 8  
1
2
• Pb−Free Package is Available  
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
MARKING DIAGRAM  
xxxM  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
xxx = Specific Device Code  
M
= Date Code  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
Watts  
†
@ T ≤ 25°C  
Device  
Package  
Shipping  
L
Total Power Dissipation on FR−5 Board,  
P
D
BZX84CxxxET1  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
(Note 2) @ T = 25°C  
225  
1.8  
mW  
mW/°C  
A
BZX84CxxxET1G SOT−23  
(Pb−Free)  
Derated above 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
556  
°C/W  
q
JA  
BZX84CxxxET3  
SOT−23 10,000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Total Power Dissipation on Alumina  
P
D
Substrate, (Note 3) @ T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derated above 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
417  
°C/W  
°C  
q
JA  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 2 of  
this data sheet.  
Junction and Storage  
Temperature Range  
T , T  
J
−65 to  
+150  
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1. Nonrepetitive current pulse per Figure 9.  
2. FR−5 = 1.0 X 0.75 X 0.62 in.  
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
July, 2004 − Rev. 3  
BZX84C2V4ET1/D  
 
123456

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SZBZX84C75ET1G 替代型号

型号 品牌 替代类型 描述 数据表
SZBZX84C75LT1G ONSEMI

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