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SZBZX84CXXXET3G PDF预览

SZBZX84CXXXET3G

更新时间： 2024-11-08 12:46:55
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器
页数 文件大小 规格书
6页 157K
描述
Zener Voltage Regulators 225 mW SOT−23 Surface Mount

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SZBZX84CXXXET3G 数据手册

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BZX84CxxxET1G Series,  
SZBZX84CxxxET1G Series  
Zener Voltage Regulators  
225 mW SOT−23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT−23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
http://onsemi.com  
Specification Features  
225 mW Rating on FR−4 or FR−5 Board  
Zener Breakdown Voltage Range − 2.4 V to 75 V  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
ESD Rating of Class 3 (> 16 kV) per Human Body Model  
Peak Power − 225 W (8 X 20 ms)  
SOT−23  
CASE 318  
STYLE 8  
3
1
Cathode  
Anode  
AEC−Q101 Qualified and PPAP Capable  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
MARKING DIAGRAM  
Pb−Free Packages are Available*  
xxx M G  
Mechanical Characteristics  
G
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260C for 10 Seconds  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
1
xxx  
M
G
= Device Code  
= Date Code*  
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
W
ORDERING INFORMATION  
@ T 25C  
L
†
Device  
Package  
Shipping  
Total Power Dissipation on FR−5 Board,  
P
D
(Note 2) @ T = 25C  
225  
1.8  
556  
mW  
mW/C  
C/W  
A
BZX84CxxxET1G  
SOT−23  
(Pb−Free)  
3,000 /  
Derated above 25C  
Tape & Reel  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
SZBZX84CxxxET1G SOT−23  
(Pb−Free)  
3,000 /  
Tape & Reel  
Total Power Dissipation on Alumina  
P
D
Substrate, (Note 3) @ T = 25C  
300  
2.4  
417  
mW  
mW/C  
C/W  
A
Derated above 25C  
BZX84CxxxET3G  
SOT−23  
10,000 /  
Tape & Reel  
Thermal Resistance, Junction−to−Ambient  
R
q
(Pb−Free)  
JA  
Junction and Storage Temperature Range  
T , T  
−65 to  
+150  
C  
SZBZX84CxxxET3G SOT−23  
(Pb−Free)  
10,000 /  
Tape & Reel  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Nonrepetitive current pulse per Figure 9.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. FR−5 = 1.0 X 0.75 X 0.62 in.  
DEVICE MARKING INFORMATION  
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
January, 2012 − Rev. 8  
BZX84C2V4ET1/D  
 
123456

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