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SZ1SMB5951BT3G PDF预览

SZ1SMB5951BT3G

更新时间: 2023-06-19 14:32:35
品牌 Logo 应用领域
安森美 - ONSEMI 测试光电二极管
页数 文件大小 规格书
6页 72K
描述
3.0 W Zener Diode Voltage Regulator

SZ1SMB5951BT3G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PDSO-L2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:4 weeks风险等级:5.75
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:380 Ω
JESD-30 代码:R-PDSO-L2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL最大功率耗散:0.55 W
参考标准:AEC-Q101标称参考电压:120 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Tin (Sn)
端子形式:L BEND端子位置:DUAL
最大电压容差:5%工作测试电流:3.1 mA
Base Number Matches:1

SZ1SMB5951BT3G 数据手册

 浏览型号SZ1SMB5951BT3G的Datasheet PDF文件第2页浏览型号SZ1SMB5951BT3G的Datasheet PDF文件第3页浏览型号SZ1SMB5951BT3G的Datasheet PDF文件第4页浏览型号SZ1SMB5951BT3G的Datasheet PDF文件第5页浏览型号SZ1SMB5951BT3G的Datasheet PDF文件第6页 
1SMB5913BT3 Series  
Preferred Device  
3 Watt Plastic  
Surface Mount  
Zener Voltage Regulators  
This complete new line of 3 Watt Zener diodes offers the following  
advantages.  
http://onsemi.com  
Features  
PLASTIC SURFACE MOUNT  
ZENER VOLTAGE  
REGULATOR DIODES  
3.3−200 V, 3 W DC POWER  
Zener Voltage Range − 3.3 V to 200 V  
ESD Rating of Class 3 (>16 kV) per Human Body Model  
Flat Handling Surface for Accurate Placement  
Package Design for Top Side or Bottom Circuit Board Mounting  
Pb−Free Packages are Available  
Mechanical Characteristics:  
Cathode  
Anode  
CASE: Void-free, transfer-molded plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
SMB  
CASE 403A  
PLASTIC  
LEADS: Modified L−Bend providing more contact area to bond pads  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
MARKING DIAGRAM  
MAXIMUM RATINGS  
AYWW  
9xxB G  
G
Rating  
Symbol Value  
Unit  
Maximum Steady State Power  
Dissipation @ T = 75°C  
Measured at Zero Lead Length  
Derate Above 75°C  
P
3.0  
W
L
D
A
Y
= Assembly Location  
= Year  
WW = Work Week  
40  
25  
mW/°C  
°C/W  
R
q
JL  
Thermal Resistance from Junction−to−Lead  
9xxB = Device Code (Refer to page 3)  
Maximum Steady State Power Dissipation  
P
550  
mW  
D
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
@ T = 25°C (Note )  
Derate Above 25°C  
Thermal Resistance from Junction−to−Ambient  
A
4.4  
226  
mW/°C  
°C/W  
R
q
JA  
ORDERING INFORMATION  
Operating and Storage Temperature Range  
T , T  
−65 to  
+150  
°C  
J
stg  
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR−4 board, using recommended footprint.  
1SMB59xxBT3  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
1SMB59xxBT3G  
SMB  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 6  
1SMB5913BT3/D  

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