Datasheet > SZ1SMA58CAT3G

SZ1SMA58CAT3G

更新时间： 2024-11-13 13:45:19

品牌	Logo	应用领域
力特 - LITTELFUSE		光电二极管
页数	文件大小	规格书
5页	345K
描述
SZ1SMA系列专为保护电压敏感型组件免受高电压、高能量瞬态事件的损坏而设计。它具有一流的箝位能力，高浪涌保护能力，低齐纳阻抗与快速响应时间。 SZ1SMA采用Littelfuse独家提供的经济

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SZ1SMA58CAT3G 数据手册

TVS Diodes

Surface Mount > 400W > 1SMA5.0AT3G Series

1SMA5.0AT3G Series

Description

The 1SMA5.0AT3G series is designed to protect voltage

sensitive components from high voltage, high energy

transients. They have excellent clamping capability, high

surge capability, low zener impedance and fast response

time. The 1SMA5.0AT3G series is supplied in the Littelfuse

exclusive, cost-effective, highly reliable package and is

ideally suited for use in communication systems,

automotive, numerical controls, process controls, medical

equipment, business machines, power supplies and many

other industrial/consumer applications.

Features

• Working Peak Reverse Voltage Range − 5.0 V to 78 V

Maximum Ratings andThermal Characteristics

• Standard Zener Breakdown Voltage Range −

6.7 V to 91.25 V

Parameter

Symbol

P_PK

Value

400

Unit

• Peak Power − 400 W @ 1 ms

Peak Power Dissipation (Note 1) @ T_L=

25°C, Pulse Width = 1 ms

• ESD Rating of Class 3 (> 16 kV) per Human Body Model

• ResponseTime isTypically < 1 ns

• Flat Handling Surface for Accurate Placement

DC Power Dissipation @ T_L= 75°C

Measured Zero Lead Length (Note 2)

1.0

• Package Design forTop Slide or Bottom Circuit

Board Mounting

Derate Above 75°C

mW/°C

°C/W

Thermal Resistance from Junction

to−Lead

RJL

• Low Proﬁle Package

• These are Pb−Free Device

DC Power Dissipation (Note 3)

@ TA = 25°C

0.5

4.0

250

mW/°C

°C/W

Derate Above 25°C

Functional Diagram

Thermal Resistance from Junction–to–

Ambient

0JA

Cathode

Anode

Forward Surge Current (Note 4) @ TA

= 25°C

I_FSM

Additional Information

Operating and Storage Temperature

Range

-65 to

+150

T_J,T_stg

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If

any of these limits are exceeded, device functionality should not be assumed, damage may

occur and reliability may be affected.

Samples

Datasheet

Resources

1. 10 X 1000 µs, non−repetitive.

2. 1” square copper pad, FR−4 board.

3. FR−4 board, using Littelfuse minimum recommended footprint, as shown in 403D-02

case outline dimensions spec.

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per

minute maximum.

Speciﬁcations are subject to change without notice.

Revised: 09/14/17

12 3 4 5

中文翻译

下载PDF

SZ1SMA58CAT3G 替代型号

型号	品牌	替代类型	描述	数据表
SMAJ58CA	LITTELFUSE	完全替代	Silicon Avalanche Diodes - 400W Surface Mount Transient Voltage Supressors

与SZ1SMA58CAT3G相关器件

型号	品牌	获取价格	描述	数据表
SZ1SMA5913BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator
SZ1SMA5914BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator
SZ1SMA5915BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator
SZ1SMA5916BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator
SZ1SMA5917BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator
SZ1SMA5918BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator
SZ1SMA5919BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator
SZ1SMA5920BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator
SZ1SMA5921BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator
SZ1SMA5922BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator

与SZ1SMA58CAT3G相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

SZ1SMA58CAT3G

SZ1SMA58CAT3G 数据手册

SZ1SMA58CAT3G 替代型号

与SZ1SMA58CAT3G相关器件

与SZ1SMA58CAT3G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SZ1SMA58CAT3G

SZ1SMA58CAT3G 数据手册

SZ1SMA58CAT3G 替代型号

与SZ1SMA58CAT3G相关器件

与SZ1SMA58CAT3G相关文章

您还可以找

您在本页遇到什么问题？