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SXVN1206N2 PDF预览

SXVN1206N2

更新时间: 2024-11-09 15:53:15
品牌 Logo 应用领域
超科 - SUPERTEX 开关晶体管
页数 文件大小 规格书
4页 125K
描述
Small Signal Field-Effect Transistor, 3.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39

SXVN1206N2 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):3.5 A最大漏源导通电阻:0.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):75 pF
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
功耗环境最大值:6.5 W认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SXVN1206N2 数据手册

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