SAMWIN
SW3205
N-channel MOSFET
BVDSS : 55V
Features
TO-220
ID
: 110A
■ High ruggedness
■ RDS(ON) (Max 0.008 Ω)@VGS=10V
■ Gate Charge (Typ 146nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
RDS(ON) : 0.008 ohm
2
1
2
3
1
1. Gate 2. Drain 3. Source
General Description
3
This N-channel enhancement mode field-effect power transistor using SAMWIN
semiconductor’s advanced planar stripe, DMOS technology intended for battery
Operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize RDS(ON), low gate charge and high rugged
avalanche characteristics.
Order Codes
Item
1
Sales Type
SW P 3205
Marking
SW3205
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDSS
ID
Drain to Source Voltage
55
110
75
V
A
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
A
IDM
VGS
EAS
(note 1)
390
A
Gate to Source Voltage
± 20
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 2)
(note 1)
(note 3)
1270
mJ
mJ
V/ns
W
EAR
dv/dt
20
5
200
PD
TSTG, TJ
TL
1.3
W/oC
oC
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
oC
Thermal characteristics
Value
Typ.
Symbol
Parameter
Unit
Min.
Max.
0.75
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
oC/W
oC/W
oC/W
0.5
Thermal resistance, Junction to ambient
62.5
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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