Datasheet > SW3205

SW3205

更新时间： 2024-01-30 10:28:47

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	692K
描述
N-channel MOSFET

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数据手册

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SW3205 数据手册

SAMWIN

SW3205

N-channel MOSFET

BV_DSS: 55V

Features

TO-220

I_D

: 110A

■ High ruggedness

■ R_DS(ON)(Max 0.008 Ω)@V_GS=10V

■ Gate Charge (Typ 146nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

R_DS(ON): 0.008 ohm

1. Gate 2. Drain 3. Source

General Description

This N-channel enhancement mode field-effect power transistor using SAMWIN

semiconductor’s advanced planar stripe, DMOS technology intended for battery

Operated systems like a DC-DC converter motor control , ups ,audio amplifier.

Also, especially designed to minimize R_DS(ON), low gate charge and high rugged

avalanche characteristics.

Order Codes

Item

Sales Type

SW P 3205

Marking

SW3205

Package

TO-220

Packaging

TUBE

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

I_D

Drain to Source Voltage

110

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

E_AS

(note 1)

390

Gate to Source Voltage

± 20

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

(note 2)

(note 1)

(note 3)

1270

V/ns

E_AR

dv/dt

200

P_D

T_STG, T_J

T_L

1.3

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

^oC

Thermal characteristics

Value

Typ.

Symbol

Parameter

Unit

Min.

Max.

0.75

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

^oC/W

0.5

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

12 3 4 5 6 7

中文翻译

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