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SW3205 PDF预览

SW3205

更新时间: 2024-11-23 08:57:39
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
7页 692K
描述
N-channel MOSFET

SW3205 数据手册

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SAMWIN  
SW3205  
N-channel MOSFET  
BVDSS : 55V  
Features  
TO-220  
ID  
: 110A  
High ruggedness  
RDS(ON) (Max 0.008 )@VGS=10V  
Gate Charge (Typ 146nC)  
Improved dv/dt Capability  
100% Avalanche Tested  
RDS(ON) : 0.008 ohm  
2
1
2
3
1
1. Gate 2. Drain 3. Source  
General Description  
3
This N-channel enhancement mode field-effect power transistor using SAMWIN  
semiconductor’s advanced planar stripe, DMOS technology intended for battery  
Operated systems like a DC-DC converter motor control , ups ,audio amplifier.  
Also, especially designed to minimize RDS(ON), low gate charge and high rugged  
avalanche characteristics.  
Order Codes  
Item  
1
Sales Type  
SW P 3205  
Marking  
SW3205  
Package  
TO-220  
Packaging  
TUBE  
Absolute maximum ratings  
Symbol  
Parameter  
Value  
Unit  
VDSS  
ID  
Drain to Source Voltage  
55  
110  
75  
V
A
Continuous Drain Current (@TC=25oC)  
Continuous Drain Current (@TC=100oC)  
Drain current pulsed  
A
IDM  
VGS  
EAS  
(note 1)  
390  
A
Gate to Source Voltage  
± 20  
V
Single pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Peak diode Recovery dv/dt  
Total power dissipation (@TC=25oC)  
Derating Factor above 25oC  
(note 2)  
(note 1)  
(note 3)  
1270  
mJ  
mJ  
V/ns  
W
EAR  
dv/dt  
20  
5
200  
PD  
TSTG, TJ  
TL  
1.3  
W/oC  
oC  
Operating Junction Temperature & Storage Temperature  
-55 ~ + 150  
Maximum Lead Temperature for soldering  
purpose, 1/8 from Case for 5 seconds.  
300  
oC  
Thermal characteristics  
Value  
Typ.  
Symbol  
Parameter  
Unit  
Min.  
Max.  
0.75  
Rthjc  
Rthcs  
Rthja  
Thermal resistance, Junction to case  
Thermal resistance, Case to Sink  
oC/W  
oC/W  
oC/W  
0.5  
Thermal resistance, Junction to ambient  
62.5  
Mar. 2011. Rev. 2.0  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
1/7  

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