SW3205B
N-channel Enhanced mode TO-220 MOSFET
Features
BVDSS : 60V
TO-220
ID
: 110A
High ruggedness
Low RDS(ON) (Typ 4.8mΩ)@VGS=10V
Low Gate Charge (Typ 80nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: DC-DC Converter, Inverter,
Synchronous Rectification
RDS(ON) : 4.8mΩ
2
1
2
3
1
1. Gate 2. Drain 3. Source
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
Sales Type
Marking
Package
TO-220
Packaging
TUBE
SW P 3205B
SW3205B
Absolute maximum ratings
Symbol
Parameter
Value
60
Unit
V
VDSS
Drain to source voltage
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
110*
A
ID
95*
440
± 20
319
A
A
IDM
VGS
EAS
Drain current pulsed
(note 1)
Gate to source voltage
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
(note 1)
(note 3)
mJ
EAR
dv/dt
31
5
mJ
V/ns
Total power dissipation (@TC=25oC)
Derating factor above 25oC
167
1.3
W
PD
W/oC
TSTG, TJ Operating junction temperature & storage temperature
-55 ~ + 150
300
oC
oC
Maximum lead temperature for soldering
TL
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Parameter
Value
0.75
Unit
Thermal resistance, Junction to case
oC/W
Rthja
Thermal resistance, Junction to ambient
56
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Aug. 2018. Rev. 3.0
1/6