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SW3205B PDF预览

SW3205B

更新时间: 2024-11-27 17:01:27
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
6页 613K
描述
TO-220

SW3205B 数据手册

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SW3205B  
N-channel Enhanced mode TO-220 MOSFET  
Features  
BVDSS : 60V  
TO-220  
ID  
: 110A  
High ruggedness  
Low RDS(ON) (Typ 4.8m)@VGS=10V  
Low Gate Charge (Typ 80nC)  
Improved dv/dt Capability  
100% Avalanche Tested  
Application: DC-DC Converter, Inverter,  
Synchronous Rectification  
RDS(ON) : 4.8mΩ  
2
1
2
3
1
1. Gate 2. Drain 3. Source  
3
General Description  
This power MOSFET is produced with advanced technology of SAMWIN.  
This technology enable the power MOSFET to have better characteristics, including fast  
switching time, low on resistance, low gate charge and especially excellent avalanche  
characteristics.  
Order Codes  
Item  
1
Sales Type  
Marking  
Package  
TO-220  
Packaging  
TUBE  
SW P 3205B  
SW3205B  
Absolute maximum ratings  
Symbol  
Parameter  
Value  
60  
Unit  
V
VDSS  
Drain to source voltage  
Continuous drain current (@TC=25oC)  
Continuous drain current (@TC=100oC)  
110*  
A
ID  
95*  
440  
± 20  
319  
A
A
IDM  
VGS  
EAS  
Drain current pulsed  
(note 1)  
Gate to source voltage  
V
Single pulsed avalanche energy  
Repetitive avalanche energy  
Peak diode recovery dv/dt  
(note 2)  
(note 1)  
(note 3)  
mJ  
EAR  
dv/dt  
31  
5
mJ  
V/ns  
Total power dissipation (@TC=25oC)  
Derating factor above 25oC  
167  
1.3  
W
PD  
W/oC  
TSTG, TJ Operating junction temperature & storage temperature  
-55 ~ + 150  
300  
oC  
oC  
Maximum lead temperature for soldering  
TL  
purpose, 1/8 from case for 5 seconds.  
*. Drain current is limited by junction temperature.  
Thermal characteristics  
Symbol  
Rthjc  
Parameter  
Value  
0.75  
Unit  
Thermal resistance, Junction to case  
oC/W  
Rthja  
Thermal resistance, Junction to ambient  
56  
oC/W  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Aug. 2018. Rev. 3.0  
1/6  

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