Datasheet > SW3205B

SW3205B

更新时间： 2024-04-09 19:01:00

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	613K
描述
TO-220

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SW3205B 数据手册

SW3205B

N-channel Enhanced mode TO-220 MOSFET

Features

BV_DSS: 60V

TO-220

I_D

: 110A

 High ruggedness

 Low R_DS(ON)(Typ 4.8mΩ)@V_GS=10V

 Low Gate Charge (Typ 80nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: DC-DC Converter, Inverter,

Synchronous Rectification

R_DS(ON): 4.8mΩ

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

TO-220

Packaging

TUBE

SW P 3205B

SW3205B

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

110*

I_D

95*

440

± 20

319

I_DM

V_GS

E_AS

Drain current pulsed

(note 1)

Gate to source voltage

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

E_AR

dv/dt

V/ns

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

167

1.3

P_D

W/^oC

T_STG, T_JOperating junction temperature & storage temperature

-55 ~ + 150

300

^oC

Maximum lead temperature for soldering

T_L

purpose, 1/8 from case for 5 seconds.

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

R_thjc

Parameter

Value

0.75

Unit

Thermal resistance, Junction to case

^oC/W

R_thja

Thermal resistance, Junction to ambient

^oC/W

Aug. 2018. Rev. 3.0

1/6

12 3 4 5 6

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