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SUV90N06-05 PDF预览

SUV90N06-05

更新时间: 2024-11-24 03:22:43
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
5页 45K
描述
N-Channel 60-V (D-S) 200degree MOSFET

SUV90N06-05 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):90 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):350 W
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SUV90N06-05 数据手册

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SUV90N06-05  
Vishay Siliconix  
New Product  
N-Channel 60-V (D-S) 200_C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFETS  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
D 200_C Junction Temperature  
0.0052 @ V = 10 V  
GS  
D PWM Optimized  
APPLICATIONS  
a
60  
90  
0.0072 @ V = 4.5 V  
GS  
D Isolated DC/DC Converters  
- Primary-Side Switch  
D Automotive  
- Fan Motors  
D
TO-262  
- 12-V Boardnet  
- Motor Drives  
1
2
3
G
G
D
S
S
N-Channel MOSFET  
Top View  
SUV90N06-05  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
V
"20  
a
T
= 25_C  
= 125_C  
90  
C
Continuous Drain Current (T = 175_C)  
I
J
D
a
T
90  
C
A
Pulsed Drain Current  
Avalanche Current  
I
240  
75  
DM  
I
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
280  
mJ  
c
T
= 25_C  
350  
C
b
Maximum Power Dissipation  
P
W
D
d
T
A
= 25_C  
4.3  
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 200  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
d
Junction-to-Ambient (PCB Mount)  
R
40  
thJA  
thJC  
_
C/W  
Junction-to-Case  
R
0.5  
Notes  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
Document Number: 72112  
S-03079—Rev. A, 03-Feb-03  
www.vishay.com  
1

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