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SUY50N03-07AP PDF预览

SUY50N03-07AP

更新时间: 2024-11-06 21:55:07
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
4页 48K
描述
N-Channel 30-V D-S 175C MOSFET

SUY50N03-07AP 技术参数

是否无铅:含铅生命周期:Transferred
零件包装代码:TO-251包装说明:,
针数:3Reach Compliance Code:unknown
风险等级:5.58Is Samacsys:N
Base Number Matches:1

SUY50N03-07AP 数据手册

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SUY50N03-07AP  
New Product  
Vishay Siliconix  
N-Channel 30-V (D-S) 175_C MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)a, b  
0.007 @ V = 10 V  
25  
18  
GS  
30  
0.010 @ V = 4.5 V  
GS  
D
TO-251  
G
Notes:  
1. Drain Connected to Tab  
G
D
S
2. Leads Trimmed to 0.092” " 0.003”  
Top View  
Order Number:  
SUY50N03-07AP  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
"20  
25  
DS  
GS  
V
V
T
= 25_C  
= 100_C  
A
a, b  
Continuous Drain Current (T = 175_C)  
I
J
D
T
A
18  
A
Pulsed Drain Current  
I
100  
25  
DM  
a, b  
Continuous Source Current (Diode Conduction)  
I
S
T
T
= 25_C  
= 25_C  
88  
C
Maximum Power Dissipation  
P
D
W
a, b  
8.3  
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
15  
40  
18  
50  
a
Junction-to-Ambient  
R
thJA  
R
thJC  
Steady State  
_C/W  
Junction-to-Case  
1.4  
1.7  
Notes  
a. Surface Mounted on 1” x1” FR4 Board.  
b. t v 10 sec.  
Document Number: 71653  
S-05114—Rev. B, 19-Nov-01  
www.vishay.com  
1

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