Datasheet > SUV90N06-05-E2

SUV90N06-05-E2

更新时间： 2024-11-24 20:51:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	87K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册

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SUV90N06-05-E2 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	90 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	350 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

SUV90N06-05-E2 数据手册

SUV90N06-05

Vishay Siliconix

N-Channel 60-V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

175 °C Junction Temperature

PWM Optimized

V_(BR)DSS(V)

r_DS(on)(Ω)

I_D(A)

0.0052 at V_GS= 10 V

0.0072 at V_GS= 4.5 V

90^a

APPLICATIONS

•

Isolated DC/DC Converters

- Primary-Side Switch

TO-262

Top View

SUV90N06-05

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

90^a

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)

I_D

90^a

240

T_C= 125 °C

I_DM

I_AS

Pulsed Drain Current

Avalanche Current

Single Pulse Avalanche Energy^b

E_AS

L = 0.1 mH

T_C= 25 °C

280

350^c

4.3

Maximum Power Dissipation^b

P_D

_A= 25 °C^d

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)^d

Symbol

Limit

Unit

R_thJA

°C/W

R_thJC

Junction-to-Case

0.5

Notes:

a. Package limited.

b. Duty cycle ≤ 1 %.

c. See SOA curve for voltage derating.

d. When Mounted on 1" square PCB (FR-4 material).

Document Number: 72112

S-71599-Rev. C, 30-Jul-07

www.vishay.com

12 3 4 5 6

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