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SURD8530T4G PDF预览

SURD8530T4G

更新时间: 2023-06-19 14:31:29
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管
页数 文件大小 规格书
5页 102K
描述
Power Rectifier, Ultra-Fast Recovery, Switch-mode, 5 A, 300 V

SURD8530T4G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:6 weeks
风险等级:1.44其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:ULTRA FAST RECOVERY POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.8 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:75 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SURD8530T4G 数据手册

 浏览型号SURD8530T4G的Datasheet PDF文件第2页浏览型号SURD8530T4G的Datasheet PDF文件第3页浏览型号SURD8530T4G的Datasheet PDF文件第4页浏览型号SURD8530T4G的Datasheet PDF文件第5页 
MURD530  
SWITCHMODEt  
Power Rectifier  
DPAK Surface Mount Package  
http://onsemi.com  
These stateoftheart devices are designed for use in switching  
power supplies, inverters and as free wheeling diodes.  
ULTRAFAST RECTIFIER  
5.0 AMPERES, 300 VOLTS  
Features  
Ultrafast 50 Nanosecond Recovery Time  
Low Forward Voltage Drop  
Low Leakage  
1
PbFree Package is Available  
4
3
Mechanical Characteristics  
Case: Epoxy, Molded  
Weight: 0.4 Gram (Approximately)  
MARKING  
DIAGRAM  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
4
Lead and Mounting Surface Temperature for Soldering Purposes:  
YWW  
U
530G  
DPAK  
CASE 369C  
260°C Max. for 10 Seconds  
2
1
Available in 16 mm Tape and Reel, 2500 Units Per Reel,  
by Adding a “T4’’ Suffix to the Part Number  
3
Y
= Year  
WW  
G
= Work Week  
= PbFree Package  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
300  
V
RRM  
ORDERING INFORMATION  
RWM  
R
Device  
MURD530T4G  
Package  
Shipping  
Average Rectified Forward Current  
I
5.0  
10  
A
A
F(AV)  
DPAK  
2500/Tape & Reel  
(Rated V , T = 165°C)  
R
C
(PbFree)  
Peak Repetitive Forward Current  
I
FRM  
(Rated V , Square Wave,  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
R
20 kHz, T = 165°C)  
C
NonRepetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, 60 Hz)  
I
75  
A
FSM  
Operating Junction and Storage  
Temperature Range  
T , T  
65 to +175  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
November, 2008 Rev. 1  
MURD530/D  

SURD8530T4G 替代型号

型号 品牌 替代类型 描述 数据表
MURD530T4G ONSEMI

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SWITCHMODE Power Rectifier DPAK Surface Mount Package

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