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SURHS8160T3G PDF预览

SURHS8160T3G

更新时间: 2023-06-19 14:31:29
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管整流二极管
页数 文件大小 规格书
5页 125K
描述
600 V, 1.0 A Ultrafast Rectifier

SURHS8160T3G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMB, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:5 weeks
风险等级:1.1其他特性:FREE WHEELING DIODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:15 A
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:AEC-Q101
最大重复峰值反向电压:600 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SURHS8160T3G 数据手册

 浏览型号SURHS8160T3G的Datasheet PDF文件第2页浏览型号SURHS8160T3G的Datasheet PDF文件第3页浏览型号SURHS8160T3G的Datasheet PDF文件第4页浏览型号SURHS8160T3G的Datasheet PDF文件第5页 
MURHS160T3  
Preferred Device  
MEGAHERTZ  
Power Rectifier  
Features and Benefits  
Ultrafast 35 Nanosecond Recovery Times  
175°C Operating Junction Temperature  
High Temperature Glass Passivated Junction  
High Voltage Capability to 600 V  
http://onsemi.com  
ULTRAFAST RECTIFIER  
1.0 AMPERES  
Applications  
600 VOLTS  
Power Supplies  
Inverters  
Free Wheeling Diodes  
2
1
Mechanical Characteristics  
Case: Epoxy, Molded  
Epoxy Meets UL 94 V0 @ 0.125 in  
Weight: 95 mg (Approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
SMB  
CASE 403A  
PLASTIC  
Lead Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Cathode Polarity Band  
This is a PbFree Device  
MARKING DIAGRAM  
MAXIMUM RATINGS  
ALYWW  
UH16G  
G
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
600  
V
RRM  
RWM  
V
V
R
UH16 = Specific Device Code  
AL  
Y
= Assembly Location  
= Year  
= Work Week  
Average Rectified Forward Current  
I
A
A
F(AV)  
(Rated V , T = 145°C)  
1.0  
15  
R
L
WW  
G
Nonrepetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
= PbFree Package  
(Note: Microdot may be in either location)  
Operating Junction and Storage  
Temperature Range  
T , T  
65 to +175  
°C  
J
stg  
ORDERING INFORMATION  
ESD Ratings:  
Machine Model = C  
> 400  
V
Device  
Package  
Shipping  
2500 /Tape & Reel  
Human Body Model = 3B  
> 8000  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MURHS160T3G  
SMB  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 Rev. 1  
MURHS160/D  

SURHS8160T3G 替代型号

型号 品牌 替代类型 描述 数据表
MURHS160T3G ONSEMI

完全替代

ULTRAFAST RECTIFIER 1.0 AMPERES 600 VOLTS

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