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STYN812S PDF预览

STYN812S

更新时间: 2024-11-11 00:02:03
品牌 Logo 应用领域
SIRECTIFIER 可控硅
页数 文件大小 规格书
2页 180K
描述
晶闸管(可控硅)Thyristor (SCRs),分立式单向可控硅Discrete Thyristors (SCRs)。

STYN812S 数据手册

 浏览型号STYN812S的Datasheet PDF文件第2页 
STYN212(S) thru STYN1012(S)  
Discrete Thyristors(SCRs)  
Dim.  
Inches  
Min. Max.  
Milimeter  
Min. Max.  
Dimensions TO-220AB  
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550  
0.580 0.630  
0.390 0.420  
0.139 0.161  
0.230 0.270  
0.100 0.125  
0.045 0.065  
0.110 0.230  
0.025 0.040  
12.70 13.97  
14.73 16.00  
9.91 10.66  
G
A
3.54  
5.85  
2.54  
1.15  
2.79  
0.64  
2.54  
4.32  
1.14  
0.35  
2.29  
4.08  
6.85  
3.18  
1.65  
5.84  
1.01  
BSC  
4.82  
1.39  
0.56  
2.79  
K
A
K
0.100  
BSC  
G
0.170 0.190  
0.045 0.055  
0.014 0.022  
0.090 0.110  
Dimensions TO-263(D2PAK)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
A
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
G
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.315  
.380  
.350  
K
E
E1  
e
9.65  
6.22  
2.54 BSC  
10.29  
8.13  
.380 .405  
.245 .320  
.100 BSC  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.20  
.575  
.090  
.040  
.050  
0
.625  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Botton Side  
L1  
L2  
L3  
L4  
.110  
.055  
.070  
.008  
R
0.46  
0.74  
.018  
.029  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
12  
Unit  
I
RMS on-state current (180° conduction angle)  
Average on-state current (180° conduction angle)  
C
Tc = 105°  
T(RMS)  
A
A
IT  
(AV)  
Tc = 105°C  
Tj = 25°C  
8
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
tp = 10 ms  
146  
140  
98  
TSM  
A
²
²
2
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
A
S
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
50  
A/µs  
_
= 2 x I , tr < 100 ns  
GT  
I
G
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage (for TN8 & TYN only)  
RGM  
5

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