Datasheet > STW48N60M2-4

STW48N60M2-4

更新时间： 2024-11-26 14:58:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	284K
描述
N沟道600 V、0.06 Ohm典型值、42 A MDmesh M2功率MOSFET，TO247-4封装

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STW48N60M2-4 数据手册

STW48N60M2-4

Datasheet

N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2

Power MOSFET in a TO247‑4 package

Features

@ T

max.

Order code

STW48N60M2-4

Jmax.

DS(on)

650 V

70 mΩ

42 A

•

Excellent switching performance thanks to the extra driving source pin

Extremely low gate charge

Excellent output capacitance (C_oss) profile

100% avalanche tested

TO247-4

Drain(1, TAB)

Zener-protected

Applications

•

Switching applications

Gate(4)

Description

Driver

source (3)

This device is an N-channel Power MOSFET developed using MDmesh M2

Power

source (2)

technology. Thanks to its strip layout and an improved vertical structure, the device

exhibits low on-resistance and optimized switching characteristics, rendering it

suitable for the most demanding high efficiency converters.

AM10177v2Z

Product status

STW48N60M2-4

Device summary

Order code

Marking

STW48N60M2-4

48N60M2

TO247-4

Tube

Package

Packing

DS10507 - Rev 4 - April 2020

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...12

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