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STW12NA50 PDF预览

STW12NA50

更新时间: 2024-09-24 22:12:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
9页 149K
描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STW12NA50 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-247包装说明:TO-247, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.78Is Samacsys:N
雪崩能效等级(Eas):670 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):11.6 A最大漏极电流 (ID):11.6 A
最大漏源导通电阻:0.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):170 W最大脉冲漏极电流 (IDM):46.4 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STW12NA50 数据手册

 浏览型号STW12NA50的Datasheet PDF文件第2页浏览型号STW12NA50的Datasheet PDF文件第3页浏览型号STW12NA50的Datasheet PDF文件第4页浏览型号STW12NA50的Datasheet PDF文件第5页浏览型号STW12NA50的Datasheet PDF文件第6页浏览型号STW12NA50的Datasheet PDF文件第7页 
STW12NA50  
N - CHANNEL ENHANCEMENT MODE  
FAST POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on)  
< 0.6 Ω  
ID  
STW12NA50  
500 V  
11.6 A  
TYPICAL RDS(on) = 0.5 Ω  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW INTRINSIC CAPACITANCES  
GATE GHARGE MINIMIZED  
3
2
1
REDUCED THRESHOLD VOLTAGE SPREAD  
DESCRIPTION  
TO-247  
This series of POWER MOSFETS represents the  
most advanced high voltage technology. The op-  
timized cell layout coupled with a new proprietary  
edge termination concur to give the device low  
RDS(on) and gate charge, unequalled ruggedness  
and superior switching performance.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
500  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
VDG R  
VGS  
500  
± 30  
V
ID  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
11.6  
A
ID  
7.3  
A
IDM()  
Ptot  
46.4  
A
Total Dissipation at Tc = 25 oC  
170  
W
Derating Factor  
1.36  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/9  
December 1995  

STW12NA50 替代型号

型号 品牌 替代类型 描述 数据表
STW13NK100Z STMICROELECTRONICS

类似代替

N-CHANNEL 1000V - 0.56 OHM - 13A TO-247 Zener-Protected SuperMESH Power MOSFET
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类似代替

N-CHANNEL 1000V - 1.1W - 8.3A TO-247 Zener-Pr
STW20NK50Z STMICROELECTRONICS

类似代替

N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

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