Datasheet > STW13NK80Z_06

STW13NK80Z_06

更新时间： 2024-09-25 04:01:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	270K
描述
N-channel 800V - 0.53ヘ - 12A - TO-247 Zener-protected SuperMESH⑩ Power MOSFET

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STW13NK80Z_06 数据手册

STW13NK80Z

N-channel 800V - 0.53Ω - 12A - TO-247

Zener-protected SuperMESH™ Power MOSFET

General features

Type

V_DSS

R_DS(on)

I_D

p_W

STW13NK80Z

800V

<0.65Ω

12A 230W

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatibility

TO-247

Description

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt

capability for the most demanding applications.

Such series complements ST full range of high

voltage MOSFETs including revolutionary

MDmesh™ products.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STW13NK80Z

W13NK80Z

TO-247

Tube

October 2006

Rev 4

1/14

www.st.com

12 3 4 5 6 7...14

中文翻译

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