Datasheet > STW13NK100Z_06

STW13NK100Z_06

更新时间： 2024-09-25 02:59:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	320K
描述
N-channel 1000V - 0.56з - 13A - TO-247 Zener - Protected SuperMESH⑩ PowerMOSFET

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中文翻译

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数据手册

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STW13NK100Z_06 数据手册

STW11NK100Z

STW13NK100Z

N-channel 1000V - 0.56Ω - 13A - TO-247

Zener - Protected SuperMESH™ PowerMOSFET

General features

V_DSS

Type

R_DS(on)

I_D

P_W

(@Tjmax)

STW13NK100Z

1000 V < 0.70 Ω 13 A 350W

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

TO-247

■ Very low intrinsic capacitances

■ Very good manufacturing repeatibility

Description

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt

capability for the most demanding applications.

Such series complements ST full range of high

voltage MOSFETs including revolutionary

MDmesh™ products.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STW13NK100Z

W13NK100Z

TO-247

Tube

August 2006

Rev 5

1/14

www.st.com

12 3 4 5 6 7...14

中文翻译

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