Datasheet > STU608S

STU608S

更新时间： 2024-11-19 21:19:35

品牌	Logo	应用领域
三合微科 - SAMHOP		/
页数	文件大小	规格书
8页	96K
描述
Transistor

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STU608S 数据手册

STU/D608S

SamHop Microelectronics Corp.

Feb. 06 2007

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

PRODUCT SUMMARY

Super high dense cell design for low RDS(ON).

VDSS

RDS(ON) ( m

) Max

Rugged and reliable.

55 @ VGS = 10V

65 @ VGS = 4.5V

TO-252 and TO-251 Package.

ESD Protected.

60V

16A

STU SERIES

TO-252AA(D-PAK)

STD SERIES

TO-251(l-PAK)

ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)

Unit

Limit

Parameter

Symbol

Drain-Source Voltage

Gate-Source Voltage

25 C

70 C

Drain Current-Continuous ^a@Ta

-Pulsed ^b

Drain-Source Diode Forward Current

Ta= 25 C

Ta=70 C

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

-55 to 175

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

C/W

12 3 4 5 6 7 8

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