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STU608S PDF预览

STU608S

更新时间: 2024-11-02 21:19:35
品牌 Logo 应用领域
三合微科 - SAMHOP /
页数 文件大小 规格书
8页 96K
描述
Transistor

STU608S 数据手册

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STU/D608S  
SamHop Microelectronics Corp.  
Feb. 06 2007  
N-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
PRODUCT SUMMARY  
Super high dense cell design for low RDS(ON).  
ID  
VDSS  
RDS(ON) ( m  
Ω
) Max  
Rugged and reliable.  
55 @ VGS = 10V  
65 @ VGS = 4.5V  
TO-252 and TO-251 Package.  
ESD Protected.  
60V  
16A  
D
D
G
S
G
STU SERIES  
TO-252AA(D-PAK)  
STD SERIES  
TO-251(l-PAK)  
S
ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)  
A
Unit  
V
Limit  
60  
Parameter  
Symbol  
Drain-Source Voltage  
V
DS  
GS  
20  
V
V
Gate-Source Voltage  
25 C  
70 C  
A
A
16  
10  
Drain Current-Continuous a @Ta  
ID  
-Pulsed b  
I
DM  
A
A
30  
10  
a
Drain-Source Diode Forward Current  
I
S
Ta= 25 C  
Ta=70 C  
50  
35  
a
W
C
Maximum Power Dissipation  
P
D
Operating Junction and Storage  
Temperature Range  
TJ, TSTG  
-55 to 175  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
C/W  
C/W  
R
JC  
JA  
3
50  
R
1

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