STTH30R04D

更新时间： 2024-11-16 04:30:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管快恢复二极管超快恢复二极管
页数	文件大小	规格书
10页	196K
描述
Ultrafast recovery diode

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中文翻译

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STTH30R04D 数据手册

STTH30R04

Ultrafast recovery diode

Main product characteristics

I_F(AV)

V_RRM

T_j

30 A

400 V

175° C

0.97 V

24 ns

V_F(typ)

t_rr

TO-220AC

DO-247

STTH30R04D

STTH30R04W

Features and benefits

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces switching and conduction losses

■ High junction temperature

DOP3I

STTH30R04PI

D PAK

STTH30R04G

■ Insulated package: DOP3I

Note: D²PAK - 2 anode terminals must be shorted on

board.

– Electrical insulation = 2500 V

www.DataSheet4U.com

RMS

Package capacitance = 12 pF

Order codes

Description

Part Number

Marking

The compromise-free, high quality design of this

diode has produced a device with low leakage

current, regularly reproducible characteristics and

intrinsic ruggedness. These characteristics make

it ideal for heavy duty applications that demand

long term reliability.

STTH30R04D

STTH30R04G

STTH30R04G-TR

STTH30R04W

STTH30R04PI

STTH30R04D

STTH30R04G

STTH30R04W

STTH30R04PI

Table 1.

Symbol

V_RRM

Absolute ratings (limiting values at 25° C, unless otherwise specified)

Parameter

Value

Unit

Repetitive peak reverse voltage

400

I_F(RMS)RMS forward current

TO-220AC / DO-247 / D²PAK T_c= 120° C

I_F(AV)

Average forward current, δ = 0.5

Repetitive peak forward current

DOP3I

T_c= 90° C

I_FRM

I_FSM

T_stg

T_j

t_p= 10 µs, F = 1 kHz

500

Surge non repetitive forward current t_p= 10 ms Sinusoidal

Storage temperature range

300

-65 to +175

-40 to +175

° C

Maximum operating junction temperature range

March 2007

Rev 1

1/10

www.st.com

12 3 4 5 6 7...10

中文翻译

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