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STTH30R04G PDF预览

STTH30R04G

更新时间: 2024-11-26 04:30:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管快恢复二极管超快恢复二极管PC快速恢复二极管
页数 文件大小 规格书
10页 196K
描述
Ultrafast recovery diode

STTH30R04G 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-263包装说明:ROHS COMPLIANT, PLASTIC, D2PAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.64
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:222512Samacsys Pin Count:4
Samacsys Part Category:DiodeSamacsys Package Category:Other
Samacsys Footprint Name:ST-D2PAKSamacsys Released Date:2019-03-23 23:36:02
Is Samacsys:N其他特性:HIGH RELIABILITY, LOW LEAKAGE CURRENT
应用:ULTRA FAST RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:300 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-40 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.1 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STTH30R04G 数据手册

 浏览型号STTH30R04G的Datasheet PDF文件第2页浏览型号STTH30R04G的Datasheet PDF文件第3页浏览型号STTH30R04G的Datasheet PDF文件第4页浏览型号STTH30R04G的Datasheet PDF文件第5页浏览型号STTH30R04G的Datasheet PDF文件第6页浏览型号STTH30R04G的Datasheet PDF文件第7页 
STTH30R04  
Ultrafast recovery diode  
Main product characteristics  
A
K
IF(AV)  
VRRM  
Tj  
30 A  
400 V  
175° C  
0.97 V  
24 ns  
A
K
VF (typ)  
trr  
A
K
TO-220AC  
DO-247  
STTH30R04D  
STTH30R04W  
Features and benefits  
K
K
Ultrafast switching  
Low reverse current  
Low thermal resistance  
A
A
K
A
A
A
Reduces switching and conduction losses  
High junction temperature  
2
DOP3I  
STTH30R04PI  
D PAK  
STTH30R04G  
Insulated package: DOP3I  
Note: D2PAK - 2 anode terminals must be shorted on  
board.  
– Electrical insulation = 2500 V  
www.DataSheet4U.com  
RMS  
Package capacitance = 12 pF  
Order codes  
Description  
Part Number  
Marking  
The compromise-free, high quality design of this  
diode has produced a device with low leakage  
current, regularly reproducible characteristics and  
intrinsic ruggedness. These characteristics make  
it ideal for heavy duty applications that demand  
long term reliability.  
STTH30R04D  
STTH30R04G  
STTH30R04G-TR  
STTH30R04W  
STTH30R04PI  
STTH30R04D  
STTH30R04G  
STTH30R04G  
STTH30R04W  
STTH30R04PI  
Table 1.  
Symbol  
VRRM  
Absolute ratings (limiting values at 25° C, unless otherwise specified)  
Parameter  
Value  
Unit  
Repetitive peak reverse voltage  
400  
50  
V
A
IF(RMS) RMS forward current  
TO-220AC / DO-247 / D2PAK Tc = 120° C  
IF(AV)  
Average forward current, δ = 0.5  
Repetitive peak forward current  
30  
A
DOP3I  
Tc = 90° C  
IFRM  
IFSM  
Tstg  
Tj  
tp = 10 µs, F = 1 kHz  
500  
A
A
Surge non repetitive forward current tp = 10 ms Sinusoidal  
Storage temperature range  
300  
-65 to +175  
-40 to +175  
° C  
° C  
Maximum operating junction temperature range  
March 2007  
Rev 1  
1/10  
www.st.com  

STTH30R04G 替代型号

型号 品牌 替代类型 描述 数据表
STTH30R04G-TR STMICROELECTRONICS

完全替代

Ultrafast recovery diode

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