Datasheet > STTA212

STTA212

更新时间： 2024-11-30 23:35:23

品牌	Logo	应用领域
其他 - ETC		二极管高压
页数	文件大小	规格书
8页	183K
描述
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE

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中文翻译

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数据手册

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STTA212 数据手册

STTA212S

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

1200V

65ns

1.5V

t_rr(typ)

V_F(max)

FEATURES AND BENEFITS

SPECIFIC TO THE FOLLOWING OPERATIONS:

SNUBBING OR CLAMPING, DEMAGHETIZATION

AND RECTIFICATION

ULTRA-FAST AND SOFT RECOVERY

VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION

TRANSISTOR

SMC

HIGH FREQUENCY OPERATION

HIGH REVERSE VOLTAGE CAPABILITY

DESCRIPTION

TURBOSWITCH 1200V drastically cuts losses in

all high voltage operations which require extremely

fast, soft and noise-free power diodes.

Due to their optimized switching performances

they aloso highly decrease power losses in any

associated switching IGBT or MOSFET in all

"freewheel mode" operations and is particulary

suitable and efficient in motor control circuitries, or

in primary of SMPS as snubber, clamping or

demagnetizing diodes secondary of SMPS as high

voltage rectifier diodes. They are also suitable for

the secondary of SMPS as high voltage rectifier

diodes.

ABSOLUTE RATINGS (limiting values)

Symbol

V_RRM

V_RSM

I_F(RMS)

I_FRM

Parameter

Repetitive peak reverse voltage

Value

1200

Unit

Non repetitive peak reverse voltage

RMS forward current

Repetitive peak forward current

tp = 5µs F=5kHz square

I_FSM

Surge non repetitive forward current tp = 10ms sinusoidal

Storage temperature range

T_stg

- 65 to + 150

125

°C

T_j

Maximum operating junction temperature

TURBOSWITCH is a trademark of STMicroelectronics

November 1999 - Ed: 4A

1/8

12 3 4 5 6 7 8

中文翻译

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