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STTA2512P PDF预览

STTA2512P

更新时间: 2024-11-30 22:19:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管高压
页数 文件大小 规格书
9页 85K
描述
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

STTA2512P 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PSFM-T2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.8
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:HIGH VOLTAGE ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.1 VJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:210 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:62.5 W
认证状态:Not Qualified参考标准:CECC
最大重复峰值反向电压:1200 V最大反向恢复时间:0.11 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STTA2512P 数据手册

 浏览型号STTA2512P的Datasheet PDF文件第2页浏览型号STTA2512P的Datasheet PDF文件第3页浏览型号STTA2512P的Datasheet PDF文件第4页浏览型号STTA2512P的Datasheet PDF文件第5页浏览型号STTA2512P的Datasheet PDF文件第6页浏览型号STTA2512P的Datasheet PDF文件第7页 
STTA2512P  
STTA5012TV1/2  
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE  
MAIN PRODUCT CHARACTERISTICS  
K2  
A2  
A2  
K1  
IF(AV)  
VRRM  
25A  
1200V  
60ns  
1.9V  
trr (typ)  
VF (max)  
K1  
A1  
K2  
A1  
STTA5012TV1  
STTA5012TV2  
FEATURES AND BENEFITS  
ULTRA-FAST, SOFT RECOVERY.  
VERY LOW OVERALL POWER LOSSES IN  
BOTH THE DIODE AND THE COMPANION  
TRANSISTOR.  
K
HIGH FREQUENCY AND/OR HIGH PULSED  
CURRENT OPERATION.  
ISOTOPTM  
HIGH REVERSE VOLTAGECAPABILITY.  
LOW INDUCTANCE PACKAGE < 5 nH.  
A
INSULATEDPACKAGE: ISOTOPTM  
Electricalinsulation : 2500VRMS  
Capacitance: < 45pF.  
K
SOD93  
STTA2512P  
DESCRIPTION  
TURBOSWITCH 1200V drastically cuts losses in  
all high voltage operationswhich require extremely  
fast, soft andnoise-free power diodes. Due to their  
optimized switching performances they also highly  
decrease power losses in any associated  
switching IGBT or MOSFET in all freewheel mode  
operations.  
They are particularly suitable in Motor Control  
circuitries, or in the primary of SMPS as snubber,  
clamping or demagnetizing diodes. They are also  
suitable for secondary of SMPS as high voltage  
rectifier diodes.  
ABSOLUTE RATINGS  
Symbol  
(limiting values, per diode)  
Parameter  
Value  
1200  
Unit  
V
VRRM  
IF(RMS)  
IFRM  
IFSM  
Tstg  
Repetitive peak reverse voltage  
RMS forward current  
50  
A
Repetitive peak forward current  
Surge non repetitive forward current  
Storage temperature range  
tp = 5 µs F = 5kHz square  
300  
A
tp = 10ms sinusoidal  
210  
A
- 65 to + 150  
150  
°C  
°C  
Tj  
Maximum operatingjunction temperature  
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.  
November 1999 - Ed: 4B  
1/9  

STTA2512P 替代型号

型号 品牌 替代类型 描述 数据表
STPS8H100D STMICROELECTRONICS

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