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STTA212S PDF预览

STTA212S

更新时间: 2024-11-30 22:19:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管高压
页数 文件大小 规格书
8页 75K
描述
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

STTA212S 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:PLASTIC, SMC, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.8
其他特性:FREE WHEELING DIODE, SNUBBER DIODE应用:HIGH VOLTAGE ULTRA FAST SOFT RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:25 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:2.8 W
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.115 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STTA212S 数据手册

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STTA212S  
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
2A  
1200V  
65ns  
1.5V  
trr (typ)  
VF (max)  
FEATURES AND BENEFITS  
SPECIFIC TO THE FOLLOWING OPERATIONS:  
SNUBBING OR CLAMPING, DEMAGHETIZATION  
ANDRECTIFICATION  
ULTRA-FAST AND SOFT RECOVERY  
VERY LOW OVERALL POWER LOSSES IN  
BOTH THE DIODE AND THE COMPANION  
TRANSISTOR  
SMC  
HIGH FREQUENCY OPERATION  
HIGH REVERSE VOLTAGECAPABILITY  
DESCRIPTION  
TURBOSWITCH 1200V drastically cuts losses in  
all highvoltageoperationswhich require extremely  
fast, soft and noise-free power diodes.  
Due to their optimized switching performances  
they aloso highly decrease power losses in any  
associated switching IGBT or MOSFET in all  
”freewheel mode” operations and is particulary  
suitable and efficient in motor control circuitries, or  
in primary of SMPS as snubber, clamping or  
demagnetizingdiodes secondaryof SMPSas high  
voltage rectifier diodes. They are also suitable for  
the secondary of SMPS as high voltage rectifier  
diodes.  
ABSOLUTE RATINGS  
Symbol  
(limiting values)  
Parameter  
Value  
1200  
1200  
10  
Unit  
V
VRRM  
VRSM  
IF(RMS)  
IFRM  
IFSM  
Tstg  
Repetitivepeak reverse voltage  
Non repetitive peak reverse voltage  
RMS forward current  
V
A
Repetitivepeak forward current  
tp = 5µs F=5kHz square  
20  
A
Surge non repetitive forward current tp = 10ms sinusoidal  
Storage temperaturerange  
25  
A
- 65 to + 150  
125  
°C  
°C  
Tj  
Maximum operatingjunction temperature  
TURBOSWITCH is a trademark of STMicroelectronics  
November 1999 - Ed: 4A  
1/8  

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