Datasheet > STS20NHS3LL_07

STS20NHS3LL_07

更新时间： 2024-09-30 03:30:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	305K
描述
N-channel 30V - 0.0032ohm - 20A - SO-8 STripFET III Power MOSFET plus monolithic schottky

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STS20NHS3LL_07 数据手册

STS20NHS3LL

N-channel 30V - 0.0032Ω - 20A - SO-8™

STripFET™III Power MOSFET plus monolithic schottky

General features

Type

V_DSS

R_DS(on)

I_D

STS20NHS3LL

30V

0.0042Ω

20A⁽¹⁾

1. This value is rated accordingly to Rthj-pcb

■ Optimal R

x Qg trade-off @ 4.5V

DS(on)

■ Reduced switching losses

■ Reduced conduction losses

SO-8

■ Improved junction-case thermal resistance

Description

This product utilizes the latest advanced design

rules of ST’s proprietary STripFET™ technology

and a proprietary process for integrating a

monolithic Schottky diode. The new Power

MOSFET is optimized for the most demanding

synchronous switch function in DC-DC converter

for Computer and Telecom.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STS20NHS3LL

20HS3LL-

SO-8

Tape & reel

January 2007

Rev 5

1/12

www.st.com

12 3 4 5 6 7...12

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