Datasheet > STS1HNC60

STS1HNC60

更新时间： 2024-02-15 21:36:48

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意法半导体 - STMICROELECTRONICS		/
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6页	139K
描述
N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh⑩II MOSFET

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STS1HNC60 数据手册

STS1HNC60

N-CHANNEL 600V - 7Ω - 0.4A SO-8

PowerMesh™II MOSFET

PRELIMINARY DATA

TYPE

DSS

DS(on)

STS1HNC60

600 V

< 8 Ω

0.36 A

■

TYPICAL R (on) = 7 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

SO-8

DESCRIPTION

Using the latest high voltage MESH OVERLAY™II

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprietary edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SWITCH MODE LOW POWER SUPPIES

(SMPS)

CFL

■

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

600

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

600

DGR

Gate- source Voltage

± 30

Drain Current (continuos) at T = 25°C

0.36

Drain Current (continuos) at T = 100°C

0.22

(●)

Drain Current (pulsed)

1.44

TOT

Total Dissipation at T = 25°C

2.5

Derating Factor

0.028

3.5

W/°C

V/ns

°C

dv/dt(1)

Peak Diode Recovery voltage slope

Storage Temperature

stg

–65 to 150

150

Max. Operating Junction Temperature

(1)I ≤ 0.36 A, di/dt ≤100A/µs, V ≤ V

, T ≤ T

j JMAX.

(BR)DSS

(•)Pulse width limited by safe operating area

July 2001

1/6

12 3 4 5 6

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