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STPS1545 PDF预览

STPS1545

更新时间: 2024-01-02 13:16:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
7页 129K
描述
POWER SCHOTTKY RECTIFIER

STPS1545 技术参数

生命周期:Obsolete包装说明:R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.71Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:FAST RECOVERY POWER
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.57 V
JESD-30 代码:R-PSIP-T3最大非重复峰值正向电流:220 A
元件数量:1相数:1
端子数量:3最高工作温度:175 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified最大重复峰值反向电压:45 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

STPS1545 数据手册

 浏览型号STPS1545的Datasheet PDF文件第2页浏览型号STPS1545的Datasheet PDF文件第3页浏览型号STPS1545的Datasheet PDF文件第4页浏览型号STPS1545的Datasheet PDF文件第5页浏览型号STPS1545的Datasheet PDF文件第6页浏览型号STPS1545的Datasheet PDF文件第7页 
STPS1545D/F/FP/R/G  
®
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
15 A  
45 V  
Tj (max)  
VF (max)  
175 °C  
0.57 V  
A
A
K
K
FEATURES AND BENEFITS  
TO-220AC  
STPS1545D  
TO-220FPAC  
STPS1545FP  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
EXTREMELY FAST SWITCHING  
INSULATED  
TO-220FPAC  
PACKAGE:  
ISOWATT220AC,  
Insulating voltage = 2000V DC  
Capacitance = 12pF  
A
A
K
K
A
AVALANCHE CAPABILITY SPECIFIED  
I2PAK  
STPS1545R  
ISOWATT220AC  
STPS1545F  
DESCRIPTION  
Single chip Schottky rectifier suited for Switch  
Mode Power Supply and high frequency DC to DC  
converters.  
K
Packaged in TO-220AC, ISOWATT220AC,  
TO-220FPAC, I2PAK or D2PAK, this device is  
intended for use in low voltage, high frequency  
inverters, free wheeling and polarity protection  
applications.  
A
NC  
D2PAK  
STPS1545G  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
V
VRRM  
45  
30  
15  
IF(RMS) RMS forward current  
A
IF(AV)  
Average forward current  
δ = 0.5  
TO-220AC,  
Tc = 155°C  
Tc = 130°C  
A
I2PAK, D2PAK  
ISOWATT220AC  
TO-220FPAC  
IFSM  
IRRM  
IRSM  
PARM  
Tstg  
Surge non repetitive forward current tp = 10 ms Sinusoidal  
Repetitive peak reverse current tp = 2 µs square F = 1kHz  
220  
A
A
1
3
Non repetitive peak reverse current tp = 100 µs square  
Repetitive peak avalanche power tp = 1µs Tj = 25°C  
Storage temperature range  
A
6000  
W
- 65 to + 175  
175  
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
dV/dt  
10000  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed: 5F  
1/7  

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