STPS15H100C

更新时间： 2024-09-26 04:30:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		高压
页数	文件大小	规格书
8页	127K
描述
High voltage power Schottky rectifier

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STPS15H100C 数据手册

STPS15H100C

High voltage power Schottky rectifier

Main product characteristics

I_F(AV)

V_RRM

2 x 7.5 A

100 V

T_j(max)

V_F(max)

175° C

0.67 V

Features and Benefits

■ Negligible switching losses

■ Low leakage current

■ Good trade off between leakage current and

forward voltage drop

■ Low thermal resistance

STPS15H100CH

IPAK

STPS15H100CB

DPAK

■ Avalanche capability specified

Description

Dual center tab Schottky rectifier suited for

switched mode power supply and high frequency

DC to DC converters.

Packaged in DPAK and IPAK, this device is

intended for use in high frequency inverters.

Table 1.

Symbol

Absolute Ratings (limiting values, per diode)

Parameter

Value

Unit

V_RRM

Repetitive peak reverse voltage

RMS forward current

100

I_F(RMS)

T_c= 135° C

Per diode

Per device

7.5

I_F(AV)

Average forward current

δ = 0.5

I_FSM

I_RRM

P_ARM

T_stg

Surge non repetitive forward current

Peak repetitive reverse current

t_p= 10 ms sinusoidal

t_p= 2 µs square F= 1 kHz

t_p= 1 µs Tj = 25° C

Repetitive peak avalanche power

Storage temperature range

Maximum operating junction temperature ⁽¹⁾

6600

-65 to + 175

175

°C

V/µs

T_j

dV/dt

Critical rate of rise of reverse voltage

10000

dPtot

dTj

---------------

-------------------------

condition to avoid thermal runaway for a diode on its own heatsink

Rth(j – a)

June 2006

Rev 4

1/8

www.st.com

12 3 4 5 6 7 8

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