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STPS15L30CB PDF预览

STPS15L30CB

更新时间: 2024-09-26 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管
页数 文件大小 规格书
5页 71K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

STPS15L30CB 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.52其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.39 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:75 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:7.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

STPS15L30CB 数据手册

 浏览型号STPS15L30CB的Datasheet PDF文件第2页浏览型号STPS15L30CB的Datasheet PDF文件第3页浏览型号STPS15L30CB的Datasheet PDF文件第4页浏览型号STPS15L30CB的Datasheet PDF文件第5页 
®
STPS15L30CB  
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCTS CHARACTERISTICS  
IF(AV)  
VRRM  
2 x 7.5 A  
30 V  
A1  
A2  
K
Tj (max)  
VF (max)  
150 °C  
0.39 V  
K
FEATURES AND BENEFITS  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
EXTREMELY FAST SWITCHING  
LOW FORWARD VOLTAGE DROP  
HIGH AVALANCHE CAPABILITY  
LOW THERMAL RESISTANCE  
A2  
A1  
DPAK  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
Dual center tab Schottky rectifier suited for switch  
Mode Power Supply and high frequency DC to DC  
converters.  
Package in DPAK, this device is intended for use  
in low voltage, high frequency inverters,  
free-wheeling and polarity protection applications.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
VRRM  
Parameter  
Repetitive peak reverse voltage  
Value  
30  
Unit  
V
IF(RMS)  
IF(AV)  
10  
7.5  
15  
A
RMS forward current  
Average forward current  
Tc = 140°C  
δ = 0.5  
Per diode  
A
Per device  
IFSM  
IRRM  
PARM  
Tstg  
75  
A
A
Surge non repetitive forward current  
Peak repetitive reverse current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 10 ms sinusoidal  
tp=2 µs square F=1kHz  
tp = 1µs Tj = 25°C  
1
2800  
W
- 65 to + 175  
150  
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature *  
Critical rate of rise reverse voltage  
dV/dt  
10000  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed : 2A  
1/5  

STPS15L30CB 替代型号

型号 品牌 替代类型 描述 数据表
STPS15L30CB-TR STMICROELECTRONICS

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