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STPS15L25 PDF预览

STPS15L25

更新时间: 2024-01-28 06:09:51
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
5页 82K
描述
LOW DROP POWER SCHOTTKY RECTIFER

STPS15L25 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:PLASTIC, D2PAK-2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.83应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.35 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大非重复峰值正向电流:250 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:25 V最大反向电流:640000 µA
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS15L25 数据手册

 浏览型号STPS15L25的Datasheet PDF文件第2页浏览型号STPS15L25的Datasheet PDF文件第3页浏览型号STPS15L25的Datasheet PDF文件第4页浏览型号STPS15L25的Datasheet PDF文件第5页 
STPS15L25D/G  
®
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
15 A  
25 V  
K
Tj (max)  
VF (max)  
150 °C  
0.35 V  
A
FEATURES  
A
NC  
K
VERY LOW FORWARD VOLTAGE DROP  
FOR LESS POWER DISSIPATION AND RE-  
DUCED HEATSINK  
OPTIMIZED CONDUCTION/REVERSE LOSSES  
TRADE-OFF WHICH MEANS THE HIGHEST  
EFFICIENCY IN THE APPLICATIONS  
TO-220AC  
STPS15L25D  
D2PAK  
STPS15L25G  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
Single Schottky rectifier suited for Switched Mode  
Power Supplies and high frequency DC to DC  
converters (VRMS).  
Packaged in TO-220AC or D2PAK, this device is  
especially intended for use as a Rectifier at the  
secondary of 3.3V SMPS and DC/DC units.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
VRRM  
IF(RMS)  
IF(AV)  
IFSM  
Parameter  
Value  
Unit  
Repetitive peak reverse voltage  
RMS forward current  
25  
V
A
30  
Average forward current  
Tc = 145°C δ = 0.5  
15  
A
Surge non repetitive forward current  
Repetitive peak reverse current  
Non repetitive peak reverse current  
Repetitive peak avalanche power  
Storage temperature range  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
1
tp = 10ms Sinusoidal  
250  
A
IRRM  
tp = 2µs square F=1kHz  
tp = 100µs square  
1
4
A
IRSM  
A
PARM  
Tstg  
tp = 1µs Tj = 25°C  
9000  
W
°C  
°C  
V/µs  
- 65 to + 150  
150  
Tj  
dV/dt  
dPtot  
10000  
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed : 5B  
1/5  

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