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STPS10150 PDF预览

STPS10150

更新时间: 2024-11-25 22:50:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 高压高电压电源
页数 文件大小 规格书
5页 87K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS10150 数据手册

 浏览型号STPS10150的Datasheet PDF文件第2页浏览型号STPS10150的Datasheet PDF文件第3页浏览型号STPS10150的Datasheet PDF文件第4页浏览型号STPS10150的Datasheet PDF文件第5页 
STPS10150CT/CG  
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
A2  
K
IF(AV)  
VRRM  
2 x 5 A  
150 V  
Tj  
175°C  
0.75 V  
VF (max)  
K
FEATURES AND BENEFITS  
A2  
A2  
K
HIGH JUNCTION TEMPERATURE CAPABILITY  
A1  
TO-220AB  
STPS10150CT  
A1  
GOOD TRADE OFF BETWEEN LEAKAGE CUR-  
RENT AND FORWARD VOLTAGE DROP  
D2PAK  
STPS10150CG  
LOW LEAKAGE CURRENT  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
Dual center tap schottky rectifier designed for  
high frequency Switched Mode Power Sup-  
plies.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Value  
150  
10  
Unit  
VRRM Repetitive peak reverse voltage  
IF(RMS) RMS forward current  
V
A
A
IF(AV)  
Average forward current TO-220AB  
δ = 0.5  
D2PAK  
Tc = 155°C  
per diode  
per device  
5
10  
IFSM  
Surge non repetitive forward current  
PARM Repetitive peak avalanche power  
tp = 10 ms sinusoidal  
tp = 1µs Tj = 25°C  
120  
3100  
A
W
°C  
Tstg  
Tj  
Storage temperature range  
- 65 to + 175  
175  
Maximum operating junction temperature  
°C  
dV/dt Critical rate of rise of reverse voltage  
10000  
V/µs  
July 2003 - Ed: 5B  
1/5  

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