STPS10150C

更新时间： 2024-11-25 23:35:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		高压高电压电源
页数	文件大小	规格书
5页	87K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS10150C 数据手册

STPS10150CT/CG

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 5 A

150 V

175°C

0.75 V

V_F(max)

FEATURES AND BENEFITS

■

HIGH JUNCTION TEMPERATURE CAPABILITY

TO-220AB

STPS10150CT

■

GOOD TRADE OFF BETWEEN LEAKAGE CUR-

RENT AND FORWARD VOLTAGE DROP

D²PAK

STPS10150CG

■

LOW LEAKAGE CURRENT

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap schottky rectifier designed for

high frequency Switched Mode Power Sup-

plies.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Value

150

Unit

V_RRMRepetitive peak reverse voltage

I_F(RMS)RMS forward current

I_F(AV)

Average forward current TO-220AB

δ = 0.5

D²PAK

Tc = 155°C

per diode

per device

I_FSM

Surge non repetitive forward current

P_ARMRepetitive peak avalanche power

tp = 10 ms sinusoidal

tp = 1µs Tj = 25°C

120

3100

°C

T_stg

Storage temperature range

- 65 to + 175

175

Maximum operating junction temperature

°C

dV/dt Critical rate of rise of reverse voltage

10000

V/µs

July 2003 - Ed: 5B

1/5

12 3 4 5

中文翻译

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