Datasheet > STPQ1NC60R

STPQ1NC60R

更新时间： 2024-11-27 23:35:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
9页	96K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 300MA I(D) \| TO-92

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STPQ1NC60R 数据手册

STQ1NC60R

N-CHANNEL 600V - 12Ω - 0.3A TO-92

PowerMESH II Power MOSFET

TYPE

DS(on)

DSS

STPQ1NC60R

600 V

< 15 Ω

0.3 A

■

TYPICAL R (on) = 12 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

TO-92

(AMMOPACK)

TO-92

BULK

DESCRIPTION

Using the latest high voltage MESH OVERLAY II

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprietary edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

LOW SWITCH MODE POWER SUPPLIES

(SMPS)

■

BATTERY CHARGER

ORDERING INFORMATION

SALES TYPE

MARKING

Q1NC60R

PACKAGE

PACKAGING

BULK

STQ1NC60R

TO-92

STQ1NC60R-AP

AMMOPACK

May 2002

1/9

12 3 4 5 6 7...9

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