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STPR1010CT PDF预览

STPR1010CT

更新时间: 2024-11-28 00:02:03
品牌 Logo 应用领域
SIRECTIFIER 二极管快恢复二极管超快恢复二极管快速恢复二极管
页数 文件大小 规格书
2页 96K
描述
快速恢复二极管Fast Recovery Diodes,超快恢复二极管Ultra Fast Recovery Diodes,Tj = -40°C ~ 125°C, Tjm = 125°C。

STPR1010CT 数据手册

 浏览型号STPR1010CT的Datasheet PDF文件第2页 
STPR1010CT thru STPR1020CT  
Ultra Fast Recovery Diodes  
Dimensions TO-220AB  
Dim.  
Inches  
Min. Max.  
Milimeter  
Min. Max.  
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550  
0.580 0.630  
0.390 0.420  
0.139 0.161  
0.230 0.270  
0.100 0.125  
0.045 0.065  
0.110 0.230  
0.025 0.040  
12.70 13.97  
14.73 16.00  
9.91 10.66  
C
C(TAB)  
A
3.54  
5.85  
2.54  
1.15  
2.79  
0.64  
2.54  
4.32  
1.14  
0.35  
2.29  
4.08  
6.85  
3.18  
1.65  
5.84  
1.01  
BSC  
4.82  
1.39  
0.56  
2.79  
A=Anode, C=Cathode, TAB=Cathode  
VRRM  
V
VRMS  
V
VDC  
V
0.100  
BSC  
0.170 0.190  
0.045 0.055  
0.014 0.022  
0.090 0.110  
STPR1010CT  
STPR1020CT  
100  
200  
70  
100  
200  
140  
Symbol  
Characteristics  
Maximum Average Forward Rectified Current @TC=125oC  
Maximum Ratings  
Unit  
I(AV)  
10  
A
A
Non Repetitive Peak Forward Surge Current  
Per Diode Sinusoidal (JEDEC METHOD)  
TP=10ms  
TP=8.3ms  
50  
55  
IFSM  
IF=5A @TJ=25oC  
IF=5A @TJ=125oC  
IF=10A @TJ=25oC  
IF=10A @TJ=125oC  
0.975  
0.925  
1.25  
Maximum Forward Voltage  
Pulse Width=300us  
Duty Cycle  
VF  
IR  
V
1.20  
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
5
100  
uA  
@TJ=100oC  
CJ  
Typical Junction Capacitance Per Element (Note 1)  
Maximum Reverse Recovery Time (Note 2)  
Typical Thermal Resistance  
80  
30  
pF  
ns  
oC/W  
oC  
TRR  
ROJC  
4.0  
TJ,TSTG Operating And Storage Temperature Range  
-55 to +150  
NOTES: 1. Measured at 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.  
FEATURES  
MECHANICAL DATA  
* Glass passivated chip  
* Case: TO-220AB molded plastic  
* Polarity: As marked on the body  
* Weight: 0.08 ounces, 2.24 grams  
* Mounting position: Any  
* Superfast switching time for high efficiency  
* Low forward voltage drop and high current capability  
* Low reverse leakage current  
* High surge capacity  

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