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STK14C88C-5C35M PDF预览

STK14C88C-5C35M

更新时间: 2024-10-29 14:54:43
品牌 Logo 应用领域
英飞凌 - INFINEON 静态存储器
页数 文件大小 规格书
21页 447K
描述
nvSRAM (non-volatile SRAM)

STK14C88C-5C35M 数据手册

 浏览型号STK14C88C-5C35M的Datasheet PDF文件第4页浏览型号STK14C88C-5C35M的Datasheet PDF文件第5页浏览型号STK14C88C-5C35M的Datasheet PDF文件第6页浏览型号STK14C88C-5C35M的Datasheet PDF文件第8页浏览型号STK14C88C-5C35M的Datasheet PDF文件第9页浏览型号STK14C88C-5C35M的Datasheet PDF文件第10页 
STK14C88C  
Package power dissipation capability  
(TA = 25 °C) ................................................................. 1.0 W  
Maximum Ratings  
Exceeding maximum ratings may shorten the useful life of the  
device. These user guidelines are not tested.  
Surface mount Pb soldering temperature  
(3 seconds) .............................................................. +260 C  
Storage temperature ................................ –65 C to +150 C  
Maximum accumulated storage time:  
DC output current  
(1 output at a time, 1 s duration) ................................. 15 mA  
Static discharge voltage  
(per MIL-STD-883, Method 3015) ......................... > 2001 V  
At 150 C ambient temperature ...................... 1000 h  
At 85 C ambient temperature .................... 20 Years  
Maximum junction temperature ................................. 150 C  
Supply voltage on VCC relative to VSS ...........–0.5 V to 7.0 V  
Latch-up current ....................................................> 140 mA  
Operating Range  
Voltage applied to outputs  
in high Z state ..................................... –0.5 V to VCC + 0.5 V  
Range  
Industrial  
Military  
Ambient Temperature  
–40 C to +85 C  
VCC  
4.5 V to 5.5 V  
4.5 V to 5.5 V  
Input voltage .......................................0.5 V to VCC + 0.5 V  
–55 C to +125 C  
Transient voltage (< 20 ns)  
on any pin to ground potential ............2.0 V to VCC + 2.0 V  
DC Electrical Characteristics  
Over the Operating Range  
Parameter  
VCC  
Description  
Power supply  
Test Conditions  
Min  
4.5  
Typ [3]  
Max  
5.5  
70  
Unit  
V
5.0  
ICC1  
Average VCC current  
tRC = 35 ns  
Industrial  
Military  
mA  
mA  
Values obtained without  
output loads (IOUT = 0 mA)  
85  
ICC2  
Average VCC current during  
STORE  
All inputs don’t care,  
Industrial  
Military  
10  
15  
mA  
mA  
VCC = Max  
Average current for duration  
tSTORE  
ICC3  
Average VCC current at  
All inputs cycling at CMOS levels.  
Values obtained without output loads  
(IOUT = 0 mA).  
35  
mA  
t
RC = 200 ns, VCC(Typ), 25 °C  
ICC4  
Average VCAP current during  
AutoStore cycle  
All inputs don’t care. Average Industrial  
5
10  
5
mA  
mA  
mA  
mA  
current for duration tSTORE  
Military  
ISB  
VCC standby current  
CE > (VCC – 0.2 V).  
Industrial  
Military  
VIN < 0.2 V or > (VCC – 0.2 V).  
Standby current level after  
nonvolatile cycle is complete.  
Inputs are static. f = 0 MHz.  
10  
[4]  
IIX  
Input leakage current  
(except HSB)  
VCC = Max, VSS < VIN < VCC Industrial  
–1  
–5  
+1  
+5  
+1  
+5  
+1  
+5  
A  
A  
A  
A  
A  
A  
Military  
Industrial  
Military  
Input leakage current (for HSB)  
–100  
–100  
–1  
IOZ  
Off-state output leakage current VCC = Max,  
SS < VOUT < VCC  
CE or OE > VIH or WE < VIL  
Industrial  
Military  
V
,
–5  
Notes  
3. Typical values are at 25 °C, V = V  
. Not 100% tested.  
CC  
CC(Typ)  
4. The HSB pin has I  
= –2 µA for V of 2.4 V when both active high and low drivers are disabled. When they are enabled standard V and V are valid. This  
OUT  
O
H
O
H
O
L
parameter is characterized but not tested.  
Document Number: 002-23965 Rev. *A  
Page 7 of 21  

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